Electron-beam enhancement of the metal vapor vacuum arc ion source

2002 ◽  
Vol 92 (5) ◽  
pp. 2884-2889 ◽  
Author(s):  
V. A. Batalin ◽  
A. S. Bugaev ◽  
V. I. Gushenets ◽  
A. Hershcovitch ◽  
B. M. Johnson ◽  
...  
Keyword(s):  
Electron Beam ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc

scholarly journals Two approaches to electron beam enhancement of the metal vapor vacuum arc ion source

2003 ◽  
Vol 21 (1) ◽  
pp. 103-108
Author(s):  
B.M. JOHNSON ◽  
A. HERSHCOVITCH ◽  
A.S. BUGAEV ◽  
V.I. GUSHENETS ◽  
E.M. OKS ◽  
...  
Keyword(s):  
Electron Beam ◽  
National Laboratory ◽  
Metal Vapor ◽  
Brookhaven National Laboratory ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Current Electronics ◽  
Experimental Physics ◽  
Internal Electron ◽  
Charge States

Conclusive demonstration of electron-beam enhancement of ion charge states for the Metal Vapor Vacuum Arc (MEVVA) ion source was recently achieved using an external electron beam (E-MEVVA) in experiments performed jointly among the Institute for Theoretical and Experimental Physics (ITEP), Moscow, Russia, the High Current Electronics Institute (HCEI), Tomsk, Russia, and Brookhaven National Laboratory (BNL), USA. The E-MEVVA experiments were performed in Moscow and Tomsk with nearly the same design of ion sources. Results for lead and bismuth cathodes yielded maximum ion charge states of Pb7+ and Bi8+ for E-MEVVA, as compared to Pb2+ and Bi2+ for conventional MEVVA operation. Additional encouraging results were also obtained using a Z-discharge to produce an internal electron-beam (Z-MEVVA and LIZ-MEV).

Electron-beam enhancement of ion charge state fractions in the metal-vapor vacuum-arc ion source

2001 ◽  
Vol 79 (7) ◽  
pp. 919-921 ◽  
Author(s):  
Alexey Bugaev ◽  
Vasily Gushenets ◽  
George Yushkov ◽  
Efim Oks ◽  
Timur Kulevoy ◽  
...  
Keyword(s):  
Electron Beam ◽  
Charge State ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc

Low jitter metal vapor vacuum arc ion source for electron beam ion trap injections

2005 ◽  
Vol 76 (7) ◽  
pp. 073304 ◽  
Author(s):  
Glenn E. Holland ◽  
Craig N. Boyer ◽  
John F. Seely ◽  
J. N. Tan ◽  
J. M. Pomeroy ◽  
...  
Keyword(s):  
Electron Beam ◽  
Ion Trap ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
Electron Beam Ion Trap ◽  
Low Jitter

Performance of a high‐current metal vapor vacuum arc ion source

1990 ◽  
Vol 61 (12) ◽  
pp. 3775-3782 ◽  
Author(s):  
Hiroshi Shiraishi ◽  
Ian G. Brown
Keyword(s):  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Current

Study on the Dopedβ-FeSi 2 Obtained by Metal Vapor Vacuum Arc Ion Source Implantation and Post-Annealing

2002 ◽  
Vol 730 ◽  
Author(s):  
Shuangbao Wang ◽  
Hong Liang ◽  
Peiran Zhu
Keyword(s):  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
Post Annealing ◽  
Strong Current ◽  
Xrd Patterns ◽  
Fe Ions

Abstractβ-FeSi2 was firstly formed by implanting Si wafers with Fe ions at 50 kV to a dose of 5×1017/cm2in a strong current Metal Vapor Vacuum Arc (MEVVA) implanter. Secondly, Ti implantation was performed on these Fe as-implanted samples. The Fe + Ti implanted samples were furnace annealed in vacuum at temperatures ranging from 650 to 975°C. The XRD patterns of the annealed samples correspond to β-FeSi2 structure (namely β-Fe(Ti)Si2). When annealing was done above 1050°C, the β-Fe(Ti)Si2 transformed into α-Fe(Ti)Si2. This implies that introducing Ti stabilizes the β-FeSi2 phase. Resistance measurements were also performed.

scholarly journals Formation of Buried Epitaxial Si-Ge Alloy Layers in Si Crystal by High Dose Ge ION Implantation

1991 ◽  
Vol 235 ◽  
Author(s):  
Kin Man Yu ◽  
Ian G. Brown ◽  
Seongil Im
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Lattice Mismatch ◽  
Solid Phase ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
Solid Phase Epitaxy ◽  
Ion Channeling

ABSTRACTWe have synthesized single crystal Si1−xGex alloy layers in Si <100> crystals by high dose Ge ion implantation and solid phase epitaxy. The implantation was performed using the metal vapor vacuum arc (Mevva) ion source. Ge ions at mean energies of 70 and 100 keV and with doses ranging from 1×1016 to to 7×1016 ions/cm2 were implanted into Si <100> crystals at room temperature, resulting in the formation of Si1−xGex alloy layers with peak Ge concentrations of 4 to 13 atomic %. Epitaxial regrowth of the amorphous layers was initiated by thermal annealing at temperatures higher than 500°C. The solid phase epitaxy process, the crystal quality, microstructures, interface morphology and defect structures were characterized by ion channeling and transmission electron microscopy. Compositionally graded single crystal Si1−xGex layers with full width at half maximum ∼100nm were formed under a ∼30nm Si layer after annealing at 600°C for 15 min. A high density of defects was found in the layers as well as in the substrate Si just below the original amorphous/crystalline interface. The concentration of these defects was significantly reduced after annealing at 900°C. The kinetics of the regrowth process, the crystalline quality of the alloy layers, the annealing characteristics of the defects, and the strains due to the lattice mismatch between the alloy and the substrate are discussed.

Solid Phase Epitaxy of Implanted Si-Ge-C Alloys

1995 ◽  
Vol 388 ◽  
Author(s):  
Xiang Lu ◽  
Nathan W. Cheung
Keyword(s):  
Lattice Mismatch ◽  
Solid Phase ◽  
Metal Vapor ◽  
High Dose Rate ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Rutherford Back Scattering

AbstractSi1-x-yGexCy/Si heterostuctures were formed on Si (100) surface by Ge and C implantation with a high dose rate MEtal - Vapor Vacuum arc (MEVVA) ion source and subsequent Solid Phase Epitaxy (SPE). after thermal annealing in the temperature range from 600 °C to 1200 °C, the implanted layer was studied using Rutherford Back-scattering Spectrometry (RBS), cross-sectional High Resolution Transmission Electron Microscopy (HRTEM) and fourbounce X-ray Diffraction (XRD) measurement. Due to the small lattice constant and wide bandgap of SiC, the incorporation of C into Si-Ge can provide a complementary material to Si-Ge for bandgap engineering of Si-based heterojunction structure. Polycrystals are formed at temperature at and below 1000 °C thermal growth, while single crystal epitaxial layer is formed at 1100 °C and beyond. XRD measurements near Si (004) peak confirm the compensation of the Si1-x Gex lattice mismatch strain by substitutional C. C implantation is also found to suppress the End of Range (EOR) defect growth.

Phase Transformation and Ion Beam Induced Crystallization in SiC Layers Formed by Mevva Implantation of Carbon into Silicon

1997 ◽  
Vol 481 ◽  
Author(s):  
Dihu Chen ◽  
S. P. Wong ◽  
L. C. Ho ◽  
H. Yan ◽  
R.W.M. Kwok
Keyword(s):  
Ion Beam ◽  
Strong Dependence ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
Preparation Conditions ◽  
Random Nucleation ◽  
The One ◽  
Amorphous Sic ◽  
Induced Crystallization

ABSTRACTBuried SiC layers were synthesized by carbon implantation into silicon with a metal vapor vacuum arc ion source under various implantation and annealing conditions. The infrared absorption spectra of these samples were deconvoluted into two or three gaussian components depending on the preparation conditions. One component peaked at around 700 cm-1was assigned to amorphous SiC (a-SiC). The other two components, both peaked at 795 cm-1 but with different values of full width at half maximum (FWHM), were attributed to β-SiC. The one with a larger (smaller) FWHM corresponds to β-SiC of smaller (larger) grains. With this deconvolution scheme, the fraction of various SiC phases in these samples were determined. It was found that for the as-implanted samples there are critical energies and doses at which the crystalline SiC fraction increases abruptly. This was attributed to the ion beam induced crystallization (IBIC) effect. It was also shown that the IBIC effect leads to strong dependence of the β-SiC fraction on the order of implantation for samples synthesized by double-energy implantation. Analysis of the evolution of the β-SiC fraction with annealing time indicated that the crystallization process in these SiC layers could well be described by the classical random nucleation and growth theory.

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