Field emission from an electron-beam irradiated C60 film

2002 ◽  
Vol 92 (12) ◽  
pp. 7302-7305 ◽  
Author(s):  
Toshiki Hara ◽  
Jun Onoe ◽  
Kazuo Takeuchi
Keyword(s):  
Author(s):  
B.G. Frost ◽  
D.C. Joy ◽  
L.F. Allard ◽  
E. Voelkl

A wide holographic field of view (up to 15 μm in the Hitachi-HF2000) is achieved in a TEM by switching off the objective lens and imaging the sample by the first intermediate lens. Fig.1 shows the corresponding ray diagram for low magnification image plane off-axis holography. A coherent electron beam modulated by the sample in its amplitude and its phase is superimposed on a plane reference wave by a negatively biased Möllenstedt-type biprism.Our holograms are acquired utilizing a Hitachi HF-2000 field emission electron microscope at 200 kV. Essential for holography are a field emission gun and an electron biprism. At low magnification, the excitation of each lens must be appropriately adjusted by the free lens control mode of the microscope. The holograms are acquired by a 1024 by 1024 slow-scan CCD-camera and processed by the “Holoworks” software. The hologram fringes indicate positively and negatively charged areas in a sample by the direction of the fringe bending (Fig.2).


1976 ◽  
Vol 57 (2) ◽  
pp. 667-678 ◽  
Author(s):  
S. Ranc ◽  
M. Pitaval ◽  
G. Fontaine

2011 ◽  
Vol 11 (6) ◽  
pp. 4968-4980
Author(s):  
Lei Wei ◽  
Xiaobing Zhang ◽  
Chaogang Lou ◽  
Zhiwei Zhao ◽  
Chen Jing ◽  
...  

2005 ◽  
Vol 86 (18) ◽  
pp. 183106 ◽  
Author(s):  
X. Yang ◽  
M. L. Simpson ◽  
S. J. Randolph ◽  
P. D. Rack ◽  
L. R. Baylor ◽  
...  

2007 ◽  
Vol 38 (1) ◽  
pp. 1305-1308
Author(s):  
Kenneth A. Dean ◽  
Emmett Howard ◽  
Michael R. Johnson ◽  
Bernard F. Coll ◽  
Larry Marshbanks ◽  
...  

2018 ◽  
Vol 54 (5A) ◽  
pp. 169
Author(s):  
Nguyen Thi Thuy

Silicon nanowires (Si NWs) were fabricated on Si(111) surfaces by both thermal evaporation and sputtering methods. Au nanocrystals were used as the metal catalysts and they were fabricated by electron beam evaporation. The field emission scanning electron microscopy (FESEM) was used to characterize the Si NWs. The diameters of the Si NWs were measured to be about few tens of nanometer. The mechanism of the nanowires formation by these methods was also discussed.


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