p-type conductivity in wide-band-gap BaCuQF (Q=S,Se)

2003 ◽  
Vol 82 (17) ◽  
pp. 2814-2816 ◽  
Author(s):  
Hiroshi Yanagi ◽  
Janet Tate ◽  
Sangmoon Park ◽  
Cheol-Hee Park ◽  
Douglas A. Keszler
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Type Conductivity ◽  
P Type

Wide band gap and p-type conductive Cu-Nb-O films

2011 ◽  
Vol 5 (4) ◽  
pp. 153-155 ◽  
Author(s):  
Seiji Yamazoe ◽  
Shunsuke Yanagimoto ◽  
Takahiro Wada
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
P Type

A pathway to p-type wide-band-gap semiconductors

2009 ◽  
Vol 95 (17) ◽  
pp. 172109 ◽  
Author(s):  
Anderson Janotti ◽  
Eric Snow ◽  
Chris G. Van de Walle
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Wide Band Gap ◽  
Wide Band Gap Semiconductors ◽  
P Type

scholarly journals A wide-band-gap p-type thermoelectric material based on quaternary chalcogenides of Cu2ZnSnQ4 (Q=S,Se)

2009 ◽  
Vol 94 (20) ◽  
pp. 202103 ◽  
Author(s):  
Min-Ling Liu ◽  
Fu-Qiang Huang ◽  
Li-Dong Chen ◽  
I-Wei Chen
Keyword(s):  
Band Gap ◽  
Thermoelectric Material ◽  
Wide Band ◽  
Wide Band Gap ◽  
P Type

scholarly journals GaN Based p-n Structures Grown on SiC Substrates

1996 ◽  
Vol 1 ◽  
Author(s):  
V.A. Dmitriev
Keyword(s):  
Band Gap ◽  
Bright Light ◽  
Wide Band ◽  
Injection Laser ◽  
Light Emitters ◽  
Wide Band Gap ◽  
High Quality ◽  
P Type

Wide band gap nitrides(InN, GaN, AlN) have been considered promising optoelectronics materials for many years [1]. Recently two main technological problems in the nitrides were overcome: (1)high quality layers has been grown on both sapphire and SiC substrates and(2) p-type GaN and AlGaN material has been obtained. These achievements resulted in the fabrication of bright light emitters in the violet, blue and green spectral regions [2].First injection laser has been demonstrated [3]. This paper reviews results obtained over the last few years on nitride p-n junctions, particularly on GaN based p-n junctions grown on SiC substrates. We will consider GaN p-n junctions, AlGaN p-n junctions, GaN and AlGaN p-i-n structures, and, finally, GaN/SiC p-n structures.

Sol–gel synthesis and characterization of wide band gap p-type nanocrystalline CuBO2

2013 ◽  
Vol 92 ◽  
pp. 198-201 ◽  
Author(s):  
S. Santra ◽  
N.S. Das ◽  
K.K. Chattopadhyay
Keyword(s):  
Band Gap ◽  
Sol Gel ◽  
Wide Band ◽  
Synthesis And Characterization ◽  
Wide Band Gap ◽  
P Type ◽  
Sol Gel Synthesis

Computational Prediction and Experimental Realization of p-Type Carriers in the Wide-Band-Gap Oxide SrZn1–xLixO2

2018 ◽  
Vol 57 (19) ◽  
pp. 11874-11883 ◽  
Author(s):  
Christos A. Tzitzeklis ◽  
Jyoti K. Gupta ◽  
Matthew S. Dyer ◽  
Troy D. Manning ◽  
Michael J. Pitcher ◽  
...  
Keyword(s):  
Band Gap ◽  
Wide Band ◽  
Computational Prediction ◽  
Wide Band Gap ◽  
Experimental Realization ◽  
P Type

Theoretical and experimental studies on wide-band-gap p-type conductive BaCuSeF and related compounds

2015 ◽  
Vol 54 (8S1) ◽  
pp. 08KC07 ◽  
Author(s):  
Hiroshi Sakakima ◽  
Mikihiko Nishitani ◽  
Koichi Yamamoto ◽  
Takahiro Wada
Keyword(s):  
Band Gap ◽  
Experimental Studies ◽  
Wide Band ◽  
Wide Band Gap ◽  
P Type ◽  
Related Compounds

P-type doping of organic wide band gap materials by transition metal oxides: A case-study on Molybdenum trioxide

2009 ◽  
Vol 10 (5) ◽  
pp. 932-938 ◽  
Author(s):  
Michael Kröger ◽  
Sami Hamwi ◽  
Jens Meyer ◽  
Thomas Riedl ◽  
Wolfgang Kowalsky ◽  
...  
Keyword(s):  
Transition Metal ◽  
Metal Oxides ◽  
Band Gap ◽  
Transition Metal Oxides ◽  
Molybdenum Trioxide ◽  
Wide Band ◽  
Wide Band Gap ◽  
P Type

Wide Band Gap and p-Type Conductive BaCuSeF Thin Films Fabricated by Pulsed Laser Deposition

2012 ◽  
Vol 51 ◽  
pp. 10NC40 ◽  
Author(s):  
Seiji Yamazoe ◽  
Munehiro Yoshikawa ◽  
Takahiro Wada
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Band Gap ◽  
Pulsed Laser ◽  
Wide Band ◽  
Laser Deposition ◽  
Wide Band Gap ◽  
P Type

scholarly journals Understanding doping anomalies in degenerate p-type semiconductor LaCuOSe

2014 ◽  
Vol 2 (17) ◽  
pp. 3429-3438 ◽  
Author(s):  
David O. Scanlon ◽  
John Buckeridge ◽  
C. Richard A. Catlow ◽  
Graeme W. Watson
Keyword(s):  
Dft Calculations ◽  
Band Gap ◽  
State Of The Art ◽  
Wide Band ◽  
Defect Chemistry ◽  
Wide Band Gap ◽  
Type Semiconductor ◽  
P Type

Using state-of-the-art hybrid DFT calculations we explain the defect chemistry of LaCuOSe, a poorly understood wide band gap p-type conductor.

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