GaAs film on Si substrate transplanted from GaAs/Ge structure by direct bonding

Dislocation accumulation in gallium-arsenide film, which is deposited on silicon substrate and cooled down from the deposition to room temperature, is examined by crystal plasticity simulation. A new approach to suppression of dislocation accumulation is proposed such that selective growth of the film and partial doping of impurities into it are combined. The results show the possibility to localize the plastic deformation near the film/substrate interface and to keep the surface region of the film almost dislocation-free. Geometry of the selectively grown film and a strategy for partial doping of impurities, which suppresses the dislocation accumulation in the surface region of the film, are considered.

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A Tem Study of Defect Structure in GaAs Film on Si Substrate

MRS Proceedings ◽

10.1557/proc-325-457 ◽

1993 ◽

Vol 325 ◽

Author(s):

Sahn Nahm ◽

Hee-Tae Lee ◽

Sang-Gi Kim ◽

Kyoung-Ik Cho

Keyword(s):

Buffer Layer ◽

Defect Structure ◽

Stacking Faults ◽

Misfit Dislocations ◽

Gaas Film ◽

Si Substrate ◽

Moiré Fringes ◽

Gaas Films ◽

Layer Stacking ◽

Gaas Buffer Layer

AbstractFor the GaAs buffer layer deposited on Si substrate at 80°C and annealed at 300°C for 10 min, the size of most GaAs islands was observed as ∼ 10 nm but large islands (∼ 40 nm) were also seen. According to the calculation of spacing of moire fringes, large GaAs islands are considered to be rotated about 4 ° with respect to the Si substrate normal. However, for the main GaAs film overgrown on the GaAs buffer layer at 580 °C, moire fringes with the spacing of 5 nm (GaAs film without rotation) completely covered the surface of Si substrate. Misfit dislocations and stacking faults were already formed at the growth stage of buffer layer. Stacking faults and misfit dislocations consisting of Lomer and 60 ° dislocations were observed in GaAs films grown at 580 °C. However, after rapid thermal annealing at 900 °C for 10 sec, only Lomer dislocations with 1/2[110] and 1/2[-110] Burgers vectors were observed.

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Low-resistance vertical conduction across epitaxially lifted-off n-GaAs film and Pd/Ge/Pd coated Si substrate

Journal of Electronic Materials ◽

10.1007/s11664-998-0199-8 ◽

1998 ◽

Vol 27 (3) ◽

pp. 110-113 ◽

Cited By ~ 1

Author(s):

J. C. Fan ◽

C. M. Tsai ◽

K. Y. Chen ◽

S. Y. Wang ◽

Gray Lin ◽

...

Keyword(s):

Gaas Film ◽

Si Substrate ◽

Low Resistance

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Evaluation and Control of Plastic Deformation in GaAs Film on Si Substrate by Means of Crystal Plasticity Analysis

MRS Proceedings ◽

10.1557/proc-280-403 ◽

1992 ◽

Vol 280 ◽

Author(s):

Tetsuya Ohashi

Keyword(s):

Plastic Deformation ◽

Continuum Mechanics ◽

Crystal Plasticity ◽

Silicon Substrate ◽

Room Temperature ◽

Surface Region ◽

Gaas Film ◽

Si Substrate ◽

New Approach ◽

And Control

ABSTRACTDislocation accumulation in patterned gallium-arsenide film, which is deposited on silicon substrate and cooled down from the deposition to room temperature, is numerically simulated under a continuum mechanics approximation. A new approach to suppression of dislocation accumulation is proposed where selective growth of the film and partial doping of impurities into it are combined. The results show the possibility to keep the surface region of the film almost dislocation free.

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Research on Micromachined Gyroscope with Electrostatic Drive and Meso-Piezoresistive Detection

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.154-155.119 ◽

2010 ◽

Vol 154-155 ◽

pp. 119-123 ◽

Cited By ~ 1

Author(s):

Yun Bo Shi ◽

Rui Rong Wang ◽

Kang Du ◽

Jun Liu

Keyword(s):

Modal Analysis ◽

Natural Frequencies ◽

Detection Method ◽

Structure Design ◽

Operating Principle ◽

Gaas Film ◽

Si Substrate ◽

Piezoresistive Effect ◽

Micromachined Gyroscope

In this paper, the structure design and operating principle is introduced to micromachined gyroscope with electrostatic drive and piezoresistive detection. In the paper, the piezoresistive effect of multi-barrier nano-film is used as detection method, which achieves high piezoresistive sensitivity compared with Silicon piezoresistive device. The gyroscope structure and multi-barrier nano-film device is fabricated by using heteroepitaxy GaAs film on Si substrate which implements the process compatible. The natural frequencies of gyroscope are determined from the modal analysis.

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Characterization of GaAs film grown on Si substrate by photoluminescence at 77 K

Applied Physics Letters ◽

10.1063/1.99371 ◽

1988 ◽

Vol 52 (7) ◽

pp. 579-581 ◽

Cited By ~ 15

Author(s):

Yihe Huang ◽

Peter Y. Yu ◽

Henry Lee ◽

Shyh Wang

Keyword(s):

Gaas Film ◽

Si Substrate

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Photoluminescence studies of selective‐area molecular beam epitaxy of GaAs film on Si substrate

Applied Physics Letters ◽

10.1063/1.99523 ◽

1988 ◽

Vol 52 (3) ◽

pp. 215-217 ◽

Cited By ~ 28

Author(s):

Henry P. Lee ◽

Shyh Wang ◽

Yi‐He Huang ◽

Peter Yu

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Gaas Film ◽

Si Substrate ◽

Selective Area ◽

Photoluminescence Studies

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Femtosecond Probe-Probe Transmission Studies of Lt-Grown Gaas Near the Band Edge

MRS Proceedings ◽

10.1557/proc-325-389 ◽

1993 ◽

Vol 325 ◽

Author(s):

H. B. Radousky ◽

A. F. Bello ◽

D. J. Erskine ◽

L. N. Dinh ◽

M. J. Bennahmias ◽

...

Keyword(s):

Relaxation Time ◽

Band Edge ◽

Gaas Film ◽

Si Substrate ◽

Gaas Sample ◽

Free Standing ◽

Pulse Technique ◽

Probe Transmission ◽

Transmission Measurements ◽

Transmission Studies

AbstractWe have studied the near-edge optical response of a LT-grown GaAs sample which was deposited at 300 °C on a Si substrate, and then annealed at 600 °C. The Si was etched away to leave a 3-micron free standing GaAs film. Femtosecond transmission measurements were made using an equal pulse technique at four wavelengths between 825 and 870 nm. For each wavelength we observe both a multipicosecond relaxation time, as well as a shorter relaxation time which is less than 100 femtoseconds.

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