GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

Applied Physics Letters ◽

10.1063/1.1590743 ◽

2003 ◽

Vol 83 (1) ◽

pp. 180-182 ◽

Author(s):

P. D. Ye ◽

G. D. Wilk ◽

B. Yang ◽

J. Kwo ◽

S. N. G. Chu ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Effect Transistor

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Characterization of Hf1-xZrxO2Gate Dielectrics with 0≤x≤1 Prepared by Atomic Layer Deposition for Metal Oxide Semiconductor Field Effect Transistor Applications

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.011101 ◽

2012 ◽

Vol 51 (1R) ◽

pp. 011101

Author(s):

Chen-Kuo Chiang ◽

Chien-Hung Wu ◽

Chin-Chien Liu ◽

Jin-Fu Lin ◽

Chien-Lun Yang ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Effect Transistor

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Atomic-Layer-Deposition HfO2-Based InP n-Channel Metal-Oxide-Semiconductor Field Effect Transistor Using Different Thicknesses of Al2O3 as Interfacial Passivation Layer

ECS Transactions ◽

10.1149/1.3481638 ◽

2019 ◽

Vol 33 (3) ◽

pp. 487-493 ◽

Author(s):

Yanzhen Wang ◽

Han Zhao ◽

Yen-Ting Chen ◽

Fei Xue ◽

Fei Zhou ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Effect Transistor

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Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition

Applied Physics Letters ◽

10.1063/1.1641527 ◽

2004 ◽

Vol 84 (3) ◽

pp. 434-436 ◽

Author(s):

P. D. Ye ◽

G. D. Wilk ◽

B. Yang ◽

J. Kwo ◽

H.-J. L. Gossmann ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Effect Transistor

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Characterization of Hf$_{1-x}$Zr$_{x}$O$_{2}$ Gate Dielectrics with $0\leq x\leq 1$ Prepared by Atomic Layer Deposition for Metal Oxide Semiconductor Field Effect Transistor Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.011101 ◽

2011 ◽

Vol 51 (1) ◽

pp. 011101 ◽

Author(s):

Chen-Kuo Chiang ◽

Chien-Hung Wu ◽

Chin-Chien Liu ◽

Jin-Fu Lin ◽

Chien-Lun Yang ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectrics ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Effect Transistor

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The Influence of Hf-Composition on Atomic Layer Deposition HfSiON Gated Metal–Oxide–Semiconductor Field-Effect Transistors after Channel-Hot-Carrier Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c009 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C009 ◽

Author(s):

Shuang-Yuan Chen ◽

Hung-Wen Chen ◽

Chuan-Hsi Liu ◽

Li-Wei Cheng

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Layer Deposition ◽

Hot Carrier Stress

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Investigation of Thermal Stability of TiN Film Formed by Atomic Layer Deposition Using Tetrakis(dimethylamino)titanium Precursor for Metal-Gate Metal–Oxide–Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04da16 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DA16 ◽

Author(s):

Tetsuro Hayashida ◽

Kazuhiko Endo ◽

Yongxun Liu ◽

Takahiro Kamei ◽

Takashi Matsukawa ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Tin Film ◽

Layer Deposition ◽

Effect Transistor ◽

Thermal Stability Of

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GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition

Journal of Electronic Materials ◽

10.1007/s11664-004-0220-9 ◽

2004 ◽

Vol 33 (8) ◽

pp. 912-915 ◽

Author(s):

P. D. Ye ◽

G. D. Wilk ◽

B. Yang ◽

J. Kwo ◽

H. -J. L. Gossmann ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition

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Atomic layer deposited (TiO2)x(Al2O3)1−x/In0.53Ga0.47As gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications

Applied Physics Letters ◽

10.1063/1.3684803 ◽

2012 ◽

Vol 100 (6) ◽

pp. 062905 ◽

Author(s):

C. Mahata ◽

S. Mallik ◽

T. Das ◽

C. K. Maiti ◽

G. K. Dalapati ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Effect Transistor

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Admittance and subthreshold characteristics of atomic-layer-deposition Al2O3 on In0.53Ga0.47As in surface and buried channel flatband metal-oxide-semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.4720940 ◽

2012 ◽

Vol 111 (10) ◽

pp. 104112 ◽

Author(s):

G. W. Paterson ◽

S. J. Bentley ◽

M. C. Holland ◽

I. G. Thayne ◽

J. Ahn ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Buried Channel ◽

Layer Deposition

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High performance atomic-layer-deposited LaLuO3/Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistor with thermally grown GeO2 as interfacial passivation layer

Applied Physics Letters ◽

10.1063/1.3462303 ◽

2010 ◽

Vol 97 (1) ◽

pp. 012106 ◽

Author(s):

J. J. Gu ◽

Y. Q. Liu ◽

M. Xu ◽

G. K. Celler ◽

R. G. Gordon ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Thermally Grown

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