Characterization of Hf1-xZrxO2Gate Dielectrics with 0≤x≤1 Prepared by Atomic Layer Deposition for Metal Oxide Semiconductor Field Effect Transistor Applications

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.011101 ◽

2012 ◽

Vol 51 (1R) ◽

pp. 011101

Author(s):

Chen-Kuo Chiang ◽

Chien-Hung Wu ◽

Chin-Chien Liu ◽

Jin-Fu Lin ◽

Chien-Lun Yang ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Effect Transistor

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GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

Applied Physics Letters ◽

10.1063/1.1590743 ◽

2003 ◽

Vol 83 (1) ◽

pp. 180-182 ◽

Author(s):

P. D. Ye ◽

G. D. Wilk ◽

B. Yang ◽

J. Kwo ◽

S. N. G. Chu ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Effect Transistor

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Atomic-Layer-Deposition HfO2-Based InP n-Channel Metal-Oxide-Semiconductor Field Effect Transistor Using Different Thicknesses of Al2O3 as Interfacial Passivation Layer

ECS Transactions ◽

10.1149/1.3481638 ◽

2019 ◽

Vol 33 (3) ◽

pp. 487-493 ◽

Author(s):

Yanzhen Wang ◽

Han Zhao ◽

Yen-Ting Chen ◽

Fei Xue ◽

Fei Zhou ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Effect Transistor

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Characterization of Hf$_{1-x}$Zr$_{x}$O$_{2}$ Gate Dielectrics with $0\leq x\leq 1$ Prepared by Atomic Layer Deposition for Metal Oxide Semiconductor Field Effect Transistor Applications

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.011101 ◽

2011 ◽

Vol 51 (1) ◽

pp. 011101 ◽

Author(s):

Chen-Kuo Chiang ◽

Chien-Hung Wu ◽

Chin-Chien Liu ◽

Jin-Fu Lin ◽

Chien-Lun Yang ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectrics ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Effect Transistor

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Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition

Applied Physics Letters ◽

10.1063/1.1641527 ◽

2004 ◽

Vol 84 (3) ◽

pp. 434-436 ◽

Author(s):

P. D. Ye ◽

G. D. Wilk ◽

B. Yang ◽

J. Kwo ◽

H.-J. L. Gossmann ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Effect Transistor

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The Influence of Hf-Composition on Atomic Layer Deposition HfSiON Gated Metal–Oxide–Semiconductor Field-Effect Transistors after Channel-Hot-Carrier Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c009 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C009 ◽

Author(s):

Shuang-Yuan Chen ◽

Hung-Wen Chen ◽

Chuan-Hsi Liu ◽

Li-Wei Cheng

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Layer Deposition ◽

Hot Carrier Stress

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Formation and characterization of nanometer scale metal-oxide-semiconductor structures on GaAs using low-temperature atomic layer deposition

Applied Physics Letters ◽

10.1063/1.1954902 ◽

2005 ◽

Vol 87 (1) ◽

pp. 013501 ◽

Author(s):

P. D. Ye ◽

G. D. Wilk ◽

E. E. Tois ◽

Jian Jim Wang

Keyword(s):

Low Temperature ◽

Atomic Layer Deposition ◽

Metal Oxide ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Nanometer Scale ◽

Semiconductor Structures ◽

Layer Deposition

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Investigation of Thermal Stability of TiN Film Formed by Atomic Layer Deposition Using Tetrakis(dimethylamino)titanium Precursor for Metal-Gate Metal–Oxide–Semiconductor Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04da16 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DA16 ◽

Author(s):

Tetsuro Hayashida ◽

Kazuhiko Endo ◽

Yongxun Liu ◽

Takahiro Kamei ◽

Takashi Matsukawa ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Tin Film ◽

Layer Deposition ◽

Effect Transistor ◽

Thermal Stability Of

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Direct measurement and characterization of n+ superhalo implants in a 120 nm gate-length Si metal–oxide–semiconductor field-effect transistor using cross-sectional scanning capacitance microscopy

Applied Physics Letters ◽

10.1063/1.1522819 ◽

2002 ◽

Vol 81 (21) ◽

pp. 3993-3995 ◽

Author(s):

P. A. Rosenthal ◽

Y. Taur ◽

E. T. Yu

Keyword(s):

Metal Oxide ◽

Direct Measurement ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Length ◽

Cross Sectional ◽

Effect Transistor

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Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor

Journal of Applied Physics ◽

10.1063/1.2335967 ◽

2006 ◽

Vol 100 (4) ◽

pp. 044515 ◽

Author(s):

Siddharth Potbhare ◽

Neil Goldsman ◽

Gary Pennington ◽

Aivars Lelis ◽

James M. McGarrity

Keyword(s):

Silicon Carbide ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Experimental Characterization ◽

Effect Transistor

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Characterization of high-sensitivity metal oxide semiconductor field effect transistor dosimeters system and LiF:Mg,Cu,P thermoluminescence dosimeters for use in diagnostic radiology

Applied Radiation and Isotopes ◽

10.1016/s0969-8043(02)00235-x ◽

2002 ◽

Vol 57 (6) ◽

pp. 883-891 ◽

Author(s):

S.L Dong ◽

T.C Chu ◽

G.Y Lan ◽

T.H Wu ◽

Y.C Lin ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

High Sensitivity ◽

Metal Oxide Semiconductor ◽

Diagnostic Radiology ◽

Oxide Semiconductor ◽

Effect Transistor

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