Pentacene thin-film transistors with Al2O3+x gate dielectric films deposited on indium-tin-oxide glass

2003 ◽  
Vol 83 (13) ◽  
pp. 2689-2691 ◽  
Author(s):  
Jiyoul Lee ◽  
J. H. Kim ◽  
Seongil Im
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Oxide Glass ◽  
Dielectric Films ◽  
Indium Tin Oxide Glass

scholarly journals Low-voltage self-assembled indium tin oxide thin-film transistors gated by microporous SiO2 treated by H3PO4

RSC Advances ◽  
2019 ◽  
Vol 9 (53) ◽  
pp. 30715-30719 ◽  
Author(s):  
Wei Dou ◽  
Yuanyuan Tan
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Electric Double Layer ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Oxide Thin Film ◽  
Self Assembled

Ultralow-voltage (0.8 V) thin-film transistors (TFTs) using self-assembled indium-tin-oxide (ITO) as the semiconducting layer and microporous SiO2 immersed in 5% H3PO4 for 30 minutes with huge electric-double-layer (EDL) capacitance as the gate dielectric are fabricated at room temperature.

High-Performance Flexible Transparent Thin-Film Transistors Using a Hybrid Gate Dielectric and an Amorphous Zinc Indium Tin Oxide Channel

2010 ◽  
Vol 22 (21) ◽  
pp. 2333-2337 ◽  
Author(s):  
Jun Liu ◽  
D. Bruce Buchholz ◽  
Robert P. H. Chang ◽  
Antonio Facchetti ◽  
Tobin J. Marks
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Dielectric ◽  
Zinc Indium Tin Oxide

Hybrid influences of defect dipole and intrinsic inducing field on orientation of PbTiO3 thin film deposited on Indium Tin Oxide/glass substrate

2012 ◽  
Vol 520 (7) ◽  
pp. 2717-2722 ◽  
Author(s):  
Zan Zheng ◽  
Yiying Yao ◽  
Wenjian Weng ◽  
Gaorong Han ◽  
Ning Ma ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Glass Substrate ◽  
Oxide Glass ◽  
Defect Dipole ◽  
Pbtio3 Thin Film ◽  
Indium Tin Oxide Glass
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