scholarly journals Low-voltage self-assembled indium tin oxide thin-film transistors gated by microporous SiO2 treated by H3PO4

RSC Advances ◽  
2019 ◽  
Vol 9 (53) ◽  
pp. 30715-30719 ◽  
Author(s):  
Wei Dou ◽  
Yuanyuan Tan
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Electric Double Layer ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Oxide Thin Film ◽  
Self Assembled

Ultralow-voltage (0.8 V) thin-film transistors (TFTs) using self-assembled indium-tin-oxide (ITO) as the semiconducting layer and microporous SiO2 immersed in 5% H3PO4 for 30 minutes with huge electric-double-layer (EDL) capacitance as the gate dielectric are fabricated at room temperature.

In-plane-gate indium-tin-oxide thin-film transistors self-assembled on paper substrates

2011 ◽  
Vol 98 (11) ◽  
pp. 113507 ◽  
Author(s):  
Jie Jiang ◽  
Jia Sun ◽  
Wei Dou ◽  
Bin Zhou ◽  
Qing Wan
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Self Assembled ◽  
Paper Substrates

Amorphous Indium Tin Oxide Thin-Film Transistors Fabricated by Cosputtering Technique

2016 ◽  
Vol 63 (3) ◽  
pp. 1072-1077 ◽  
Author(s):  
Xin Xu ◽  
Letao Zhang ◽  
Yang Shao ◽  
Zheyuan Chen ◽  
Yong Le ◽  
...  
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film

scholarly journals Low-voltage polymer thin-film transistors with a self-assembled monolayer as the gate dielectric

2005 ◽  
Vol 87 (24) ◽  
pp. 243509 ◽  
Author(s):  
Yeong Don Park ◽  
Do Hwan Kim ◽  
Yunseok Jang ◽  
Minkyu Hwang ◽  
Jung Ah Lim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Self Assembled Monolayer ◽  
Polymer Thin Film ◽  
Self Assembled

Low-Voltage Metal-Oxide Thin Film Transistors Using P-Type Tin-Oxide Semiconductors

2019 ◽  
Vol 19 (9) ◽  
pp. 5619-5623
Author(s):  
Y. L Chen ◽  
G. L Liou ◽  
H. H Hsu ◽  
P. C Chen ◽  
Z. W Zheng ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Oxide Thin Film ◽  
Oxide Semiconductors ◽  
Metal Oxide Thin Film ◽  
P Type

P-Doped SiO2 Proton Conducting Films for Low Voltage Thin Film Transistors

2013 ◽  
Vol 773 ◽  
pp. 660-663
Author(s):  
Li Qiang Guo ◽  
Zhao Jun Guo ◽  
Yuan Yuan Yang ◽  
Ju Mei Zhou
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Low Voltage ◽  
Proton Conduction ◽  
Proton Conductors ◽  
Oxide Thin Film ◽  
Shadow Mask ◽  
Electrical Characteristics ◽  
Capacitance Density

P-doped SiO2 were prepared by PECVD and one metal shadow mask self-assembled method was used for fabricating oxide thin film transistors gated by such proton conductors. Proton conduction of these films was demonstrated and electrical characteristics of oxide thin film transistors gated by such proton conductors were discussed. Due to excellent proton conduction and big capacitance density, oxide thin film transistors gated by such proton conductors have obtained excellent performances with mobility of 48.39 cm2/Vs, threshold voltage of-0.36 V, subthreshold swing of 0.13 V/decade, Ion/off ratio of 3.2×106 with the relative humidity of 30% at the room temperature.

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