An electromagnetically focused electron beam line source

2003 ◽  
Vol 74 (11) ◽  
pp. 4616-4619 ◽  
Author(s):  
Munawar Iqbal ◽  
Khalid Masood ◽  
Mohammad Rafiq ◽  
Maqbool A. Chaudhary ◽  
Fazal-e- Aleem
Keyword(s):  
Electron Beam ◽  
Line Source ◽  
Beam Line

scholarly journals Commissioning of beam instrumentation at the CERN AWAKE facility after integration of the electron beam line

2018 ◽  
Vol 1067 ◽  
pp. 072015
Author(s):  
Ishkhan Gorgisyan ◽  
Stefano Mazzoni ◽  
Stephane Burger ◽  
Lars Jensen ◽  
Steen Jensen ◽  
...  
Keyword(s):  
Electron Beam ◽  
Beam Line

Soi Formation by a Line-Source Electron Beam and Electrical Characteristics

1987 ◽  
Vol 107 ◽  
Author(s):  
H. Hada ◽  
H. Okabayashi ◽  
S. Saito ◽  
T. Nakamura ◽  
Y. Kawase
Keyword(s):  
Electron Beam ◽  
Grain Boundary ◽  
Line Source ◽  
Field Effect ◽  
Electrical Characteristics ◽  
Field Effect Mobility ◽  
Boundary Density ◽  
Width Direction ◽  
Good Uniformity

AbstractCrystal quality of SOI and electrical characteristics of p-MOSFETs fabricated in SOI films have been studied. The SOI recrystallization is done by a cw-operated, high-power, line-source and line-shaped electron beam annealing. Single crystal SOI strips, 15~20¼mxa few mm in sized, are formed with a good uniformity on a 4 inch diameter wafer by adopting the step and repeat system in the annealing apparatus. p-MOSFETs with ~90% field effect mobility of the bulk values are fabricated in the SOI films. The electrical characteristics of p-MOSFETs, fabricated in the SOI regions beyond the lateral seeding distance (~15¼m), are found to be independent of the low angle grain boundary density in the MOSFET channel, when the low angle grain boundaries extended toward the channel width direction.

The electron beam orbit sensitivity of the photon flux of the photon beam line

2002 ◽  
Author(s):  
I. Hsu ◽  
G.H. Luo ◽  
K.L. Tsang ◽  
C.C. Chu ◽  
C.I. Yu ◽  
...  
Keyword(s):  
Electron Beam ◽  
Beam Line ◽  
Photon Beam ◽  
Photon Flux ◽  
Beam Orbit

Erbium silicide formation using a line‐source electron beam

1984 ◽  
Vol 44 (8) ◽  
pp. 747-749 ◽  
Author(s):  
J. A. Knapp ◽  
S. T. Picraux ◽  
C. S. Wu ◽  
S. S. Lau
Keyword(s):  
Electron Beam ◽  
Line Source ◽  
Silicide Formation
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