Soi Formation by a Line-Source Electron Beam and Electrical Characteristics

1987 ◽  
Vol 107 ◽  
Author(s):  
H. Hada ◽  
H. Okabayashi ◽  
S. Saito ◽  
T. Nakamura ◽  
Y. Kawase
Keyword(s):  
Electron Beam ◽  
Grain Boundary ◽  
Line Source ◽  
Field Effect ◽  
Electrical Characteristics ◽  
Field Effect Mobility ◽  
Boundary Density ◽  
Width Direction ◽  
Good Uniformity

AbstractCrystal quality of SOI and electrical characteristics of p-MOSFETs fabricated in SOI films have been studied. The SOI recrystallization is done by a cw-operated, high-power, line-source and line-shaped electron beam annealing. Single crystal SOI strips, 15~20¼mxa few mm in sized, are formed with a good uniformity on a 4 inch diameter wafer by adopting the step and repeat system in the annealing apparatus. p-MOSFETs with ~90% field effect mobility of the bulk values are fabricated in the SOI films. The electrical characteristics of p-MOSFETs, fabricated in the SOI regions beyond the lateral seeding distance (~15¼m), are found to be independent of the low angle grain boundary density in the MOSFET channel, when the low angle grain boundaries extended toward the channel width direction.

scholarly journals Influence of Building Direction on the Oxidation Behavior of Inconel 718 Alloy Fabricated by Additive Manufacture of Electron Beam Melting

Materials ◽  
2018 ◽  
Vol 11 (12) ◽  
pp. 2549 ◽  
Author(s):  
Lv Li ◽  
Xiaojuan Gong ◽  
Xianjue Ye ◽  
Jianwei Teng ◽  
Yan Nie ◽  
...  
Keyword(s):  
Electron Beam ◽  
Grain Boundary ◽  
Inconel 718 ◽  
Electron Beam Melting ◽  
Oxidation Behavior ◽  
Additive Manufacture ◽  
Inconel 718 Alloy ◽  
Temperature Oxidation ◽  
Boundary Density ◽  
High Temperature Oxidation Behavior

This research was aimed at investigating the high temperature oxidation behavior of Inconel 718 superalloy fabricated by electron beam melting with the building direction of 0°, 55° and 90° deviation from the Z axis of cylindrical samples. Columnar γ-fcc phase with preferred crystal orientations was found in all specimens. With the temperature ranging from 700 to 1000 °C, the 0° sample, symbolized by the lowest grain boundary density, and largest grain size, reveals the best oxidation performance. It is concluded that the building direction has more impact on the amount of grain boundary density than crystal orientation, which determined the oxidation resistance.

Effect of High-Speed Blade Coating on Electrical Characteristics in Polymer Based Transistors

2020 ◽  
Vol 20 (9) ◽  
pp. 5486-5490
Author(s):  
Jun-Ik Park ◽  
Hyun-Seok Jeong ◽  
Premkumar Vincent ◽  
Jihwan Park ◽  
Do-Kyung Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Conjugated Polymer ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Speed ◽  
Electrical Characteristics ◽  
Field Effect Mobility ◽  
Polymer Thin Film ◽  
Blade Coating

We explore the effect of high-speed blade coating on electrical characteristics of conjugated polymer-based thin-film transistors (TFTs). As the blade-coating speed increased, the thickness of the polymer thin-film was naturally increased while the surface roughness was found to be unchanged. Polymer TFTs show two remarkable tendencies on the magnitude of field-effect mobility with increasing blade-coating speed. As the blade-coating speed increased up to 2 mm/s, the fieldeffect mobility increased to 4.72 cm2V−1s−1. However, when the coating speed reached 6 mm/s beyond 2 mm/s, the field-effect mobility rather decreased to 3.18 cm2V−1s−1. The threshold voltage was positively shifted from 2.09 to 8.29 V with respect to increase in blade-coating speed.

A New Annealing Method to Obtain High Quality Poly-Si

1992 ◽  
Vol 283 ◽  
Author(s):  
Yoon-Ho Song ◽  
Jong-Tae Baek ◽  
Kee-Soo Nam ◽  
Sang-Won Kang
Keyword(s):  
Field Effect ◽  
Field Effect Mobility ◽  
High Quality ◽  
Furnace Annealing ◽  
Conventional Furnace ◽  
Good Uniformity ◽  
Conventional Furnace Annealing ◽  
Annealing Method ◽  
Si Thin Film ◽  
Free Nucleus

ABSTRACTA new annealing method, a combination of rapid thermal annealing (RTA) and furnace annealing, has been developed to obtain a high quality poly-Si from a-Si deposited by LPCVD. This method produces a large grain poly-Si with good uniformity, which may result from the growth of relatively defect-free nucleus generated at a high temperature by RTA. Poly-Si thin film transistors fabricated by this new annealing method have higher field effect mobility and better uniformity compared with those by the conventional furnace annealing.

scholarly journals Numerical Analysis on Effective Mass and Traps Density Dependence of Electrical Characteristics of a-IGZO Thin-Film Transistors

Electronics ◽  
2020 ◽  
Vol 9 (1) ◽  
pp. 119 ◽  
Author(s):  
Jihwan Park ◽  
Do-Kyung Kim ◽  
Jun-Ik Park ◽  
In Man Kang ◽  
Jaewon Jang ◽  
...  
Keyword(s):  
Thin Film ◽  
Effective Mass ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Electron Mass ◽  
Simulation Methods ◽  
Electrical Characteristics ◽  
Field Effect Mobility ◽  
Electron Effective Mass ◽  
Amorphous Ingazno

We have investigated the effect of electron effective mass (me*) and tail acceptor-like edge traps density (NTA) on the electrical characteristics of amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs) through numerical simulation. To examine the credibility of our simulation, we found that by adjusting me* to 0.34 of the free electron mass (mo), we can preferentially derive the experimentally obtained electrical properties of conventional a-IGZO TFTs through our simulation. Our initial simulation considered the effect of me* on the electrical characteristics independent of NTA. We varied the me* value while not changing the other variables related to traps density not dependent on it. As me* was incremented to 0.44 mo, the field-effect mobility (µfe) and the on-state current (Ion) decreased due to the higher sub-gap scattering based on electron capture behavior. However, the threshold voltage (Vth) was not significantly changed due to fixed effective acceptor-like traps (NTA). In reality, since the magnitude of NTA was affected by the magnitude of me*, we controlled me* together with NTA value as a secondary simulation. As the magnitude of both me* and NTA increased, µfe and Ion deceased showing the same phenomena as the first simulation. The magnitude of Vth was higher when compared to the first simulation due to the lower conductivity in the channel. In this regard, our simulation methods showed that controlling me* and NTA simultaneously would be expected to predict and optimize the electrical characteristics of a-IGZO TFTs more precisely.

Investigation of Intrinsic Electrical Characteristics and Contact Effects in p-Type Tin Monoxide Thin-Film Transistors Using Gated-Four-Probe Measurements

2015 ◽  
Vol 15 (10) ◽  
pp. 7582-7585 ◽  
Author(s):  
Young-Joon Han ◽  
Yong-Jin Choi ◽  
Hoon Jeong ◽  
Hyuck-In Kwon
Keyword(s):  
Field Effect ◽  
Electrode Materials ◽  
Electronic Energy ◽  
Electrical Performance ◽  
Electrical Characteristics ◽  
Field Effect Mobility ◽  
Short Channel ◽  
Oxide Tft ◽  
Parasitic Resistance ◽  
P Type

We investigate the intrinsic electrical characteristics and source/drain parasitic resistance in p-type SnO TFTs fabricated using Ni electrodes based on the gated-four-probe method. Because of the relatively high work function and inexpensive price, Ni has been most frequently used as the source/drain electrode materials in p-type SnO TFTs. However, our experimental data shows that the width normalized parasitic resistances of SnO TFT with Ni electrodes are around one to three orders of magnitude higher than those in the representative n-type oxide TFT, amorphous indium– gallium–zinc oxide TFT, and are comparable with those in amorphous silicon TFTs with Mo electrodes. This result implies that the electrical performance of the short channel SnO TFT can be dominated by the source/drain parasitic resistances. The intrinsic field-effect mobility extracted without being influenced by source/drain parasitic resistance was ∼2.0 cm2/Vs, which is around twice the extrinsic field-effect mobility obtained from the conventional transconductance method. The large contact resistance is believed to be mainly caused from the heterogeneous electronic energy-level mismatch between the SnO and Ni electrodes.

Effects of Li doping on the negative bias stress stability of solution-processed ZnO thin film transistors

RSC Advances ◽  
2015 ◽  
Vol 5 (84) ◽  
pp. 68392-68396 ◽  
Author(s):  
Bokyung Kim ◽  
Si Yun Park ◽  
Jieun Ko ◽  
Young-Jae Kim ◽  
Youn Sang Kim
Keyword(s):  
Thin Film Transistors ◽  
Field Effect ◽  
Negative Bias ◽  
Zno Thin Film ◽  
Electrical Characteristics ◽  
Field Effect Mobility ◽  
Li Doping ◽  
Bias Stress ◽  
Stability Of Solution ◽  
Doped Zno

To investigate the effect of Li dopant on the electrical characteristics under negative bias stress (NBS), we analysed ZnO and Li doped ZnO TFTs. The Li dopant enhanced the field effect mobility and sustained the variation in Von of the ZnO TFTs.

Effect of Grain Boundary on the Field-Effect Mobility of Microrod Single Crystal Organic Transistors

2014 ◽  
Vol 14 (11) ◽  
pp. 8153-8157
Author(s):  
Jaekyun Kim ◽  
Jingu Kang ◽  
Sangho Cho ◽  
Byungwook Yoo ◽  
Yong-Hoon Kim ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Single Crystal ◽  
Field Effect ◽  
Organic Transistors ◽  
Field Effect Mobility

Improvement in the Positive Bias Temperature Stability of SnOx-Based Thin Film Transistors by Hf and Zn Doping

2015 ◽  
Vol 15 (10) ◽  
pp. 7606-7610 ◽  
Author(s):  
Dongsuk Han ◽  
Jaehyung Park ◽  
Minsoo Kang ◽  
Hyeongtag Jeon ◽  
Jongwan Park
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Defect Density ◽  
Temperature Stability ◽  
Oxidation Potential ◽  
Oxide Thin Film ◽  
Electrical Characteristics ◽  
Field Effect Mobility

We investigated the performance of tin oxide thin film transistors (TFTs) using DC magnetron sputtering. A remarkable improvement in the transfer characteristics was obtained for the Hf-doped tin oxide (HTO) TFT. We also developed amorphous hafnium-zinc-tin oxide (HZTO) thin film transistors and investigated the effects of hafnium doping on the electrical characteristics of the HTO TFTs. Doping with hafnium resulted in a reduced defect density in the tin oxide channel layer related to oxygen vacancies, which may result from increased field effect mobility. Zinc atoms have relatively higher oxidation potential compared to tin atoms, so more oxygen molecules can be absorbed and more electrons are trapped in the HZTO films. The HZTO TFTs exhibited good electrical characteristics with a field effect mobility of 10.98 cm2/Vs, and a high ION/IOFF ratio over 108.

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