Kinetics and thermodynamics of thin‐film deposition by molecular beam methods. II. Nucleation, growth, and evaporation of cadmium on germanium single crystals

1972 ◽  
Vol 43 (12) ◽  
pp. 4886-4900 ◽  
Author(s):  
R. J. H. Voorhoeve ◽  
J. N. Carides ◽  
R. S. Wagner
2019 ◽  
Vol 7 (36) ◽  
pp. 20733-20741 ◽  
Author(s):  
Mehri Ghasemi ◽  
Miaoqiang Lyu ◽  
Md Roknuzzaman ◽  
Jung-Ho Yun ◽  
Mengmeng Hao ◽  
...  

The phenethylammonium cation significantly promotes the formation of fully-covered thin-films of hybrid bismuth organohalides with low surface roughness and excellent stability.


2018 ◽  
Vol 6 (15) ◽  
pp. 3834-3844 ◽  
Author(s):  
José Manuel Vila-Fungueiriño ◽  
Beatriz Rivas-Murias ◽  
Juan Rubio-Zuazo ◽  
Adrian Carretero-Genevrier ◽  
Massimo Lazzari ◽  
...  

Chemical solution methods for thin-film deposition constitute an affordable alternative to high-vacuum physical technologies, like Sputtering, Pulsed Laser Deposition (PLD) or Molecular Beam Epitaxy (MBE).


1990 ◽  
Vol 206 ◽  
Author(s):  
I. Yamada ◽  
G.H. Takaoka ◽  
H. Usui ◽  
S.K. Koh

ABSTRACTAtomic scale imaging by STM and TEM of the initial stages of film growth of Ag and Au on graphite substrates indicate that the film nucleation processes are markedly different for ionized cluster beam (ICB) and molecular beam (MBE) deposition. Recent results on measurements of cluster size and formation of epitaxial metal-semiconductor layers by ICB are also discussed.


2007 ◽  
Vol 111 (29) ◽  
pp. 11045-11058 ◽  
Author(s):  
Abhishek Dube ◽  
Manish Sharma ◽  
Paul F. Ma ◽  
Peter A. Ercius ◽  
David A. Muller ◽  
...  

1998 ◽  
Vol 324 (1-2) ◽  
pp. 37-43 ◽  
Author(s):  
K.P Muthe ◽  
J.C Vyas ◽  
Savita N Narang ◽  
D.K Aswal ◽  
S.K Gupta ◽  
...  

Author(s):  
Iver Lauermann ◽  
Alexander Steigert

The CISSY end station combines thin film deposition (sputtering, molecular beam epitaxy ambient-pressure methods) with surface and bulk-sensitive analysis (photo emission, x-ray emission, x-ray absorption) in the same UHV system, allowing fast and contamination–free transfer between deposition and analysis. It is mainly used for the fabrication and characterization of thin film devices and their components like thin film photovoltaic cells, water-splitting devices and other functional thin film materials.


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