When the Sequence of Thin Film Deposition Matters: Examination of Organic-on-Organic Heterostructure Formation Using Molecular Beam Techniques and in Situ Real Time X-ray Synchrotron Radiation

2016 ◽  
Vol 120 (11) ◽  
pp. 6165-6179 ◽  
Author(s):  
E. R. Kish ◽  
R. K. Nahm ◽  
A. R. Woll ◽  
J. R. Engstrom
Keyword(s):  
Thin Film ◽  
Synchrotron Radiation ◽  
Real Time ◽  
Molecular Beam ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
X Ray

scholarly journals CISSY: A station for preparation and surface/interface analysis of thin film materials and devices

2016 ◽  
Vol 2 ◽  
Author(s):  
Iver Lauermann ◽  
Alexander Steigert
Keyword(s):  
Thin Film ◽  
Molecular Beam ◽  
Ambient Pressure ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
X Ray ◽  
Fabrication And Characterization ◽  
X Ray Absorption ◽  
Thin Film Devices

The CISSY end station combines thin film deposition (sputtering, molecular beam epitaxy ambient-pressure methods) with surface and bulk-sensitive analysis (photo emission, x-ray emission, x-ray absorption) in the same UHV system, allowing fast and contamination–free transfer between deposition and analysis. It is mainly used for the fabrication and characterization of thin film devices and their components like thin film photovoltaic cells, water-splitting devices and other functional thin film materials.

Chemical Bath Deposition of Lead Sulphide (PbS) Thin Film and their Characterization

2013 ◽  
Vol 209 ◽  
pp. 111-115 ◽  
Author(s):  
Sandip V. Bhatt ◽  
M.P. Deshpande ◽  
Bindiya H. Soni ◽  
Nitya Garg ◽  
Sunil H. Chaki
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Raman Spectroscopy ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Excitation Wavelength ◽  
Face Centered Cubic ◽  
Phonon Modes ◽  
Lead Sulphide ◽  
X Ray

Thin film deposition of PbS is conveniently carried out by chemical reactions of lead acetate with thiourea at room temperature. Energy dispersive analysis of X-ray (EDAX), X-ray diffraction (XRD), selected area electron diffraction patterns (SAED), UV-Vis-NIR spectrophotometer, Scanning Electron Microscopy (SEM), Atomic force microscopy (AFM), Photoluminescence (PL) and Raman spectroscopy techniques are used for characterizing thin films. EDAX spectra shows that no impurity is present and XRD pattern indicates face centered cubic structure of PbS thin films. The average crystallite size obtained using XRD is about 15nm calculated using Scherrer’s formula and that determined from Hall-Williamson plot was found to be 18nm. SAED patterns indicate that the deposited PbS thin films are polycrystalline in nature. Blue shift due to quantum confinement was seen from the UV-Vis-NIR absorption spectra of thin film in comparison with bulk PbS. The Photoluminescence spectra obtained for thin film with different excitation sources shows sharp emission peaks at 395nm and its intensity of photoluminescence increases with increasing the excitation wavelength. Raman spectroscopy of deposited thin film was used to study the optical phonon modes at an excitation wavelength of 488nm using (Ar+) laser beam.

Real time analysis of ultra-thin CIGS thin film deposition

2012 ◽  
Author(s):  
Vikash Ranjan ◽  
Krishna Aryal ◽  
Scott Little ◽  
Yunus Erkaya ◽  
Grace Rajan ◽  
...  
Keyword(s):  
Thin Film ◽  
Real Time ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Time Analysis ◽  
Real Time Analysis ◽  
Cigs Thin Film

scholarly journals Polymer assisted deposition of epitaxial oxide thin films

2018 ◽  
Vol 6 (15) ◽  
pp. 3834-3844 ◽  
Author(s):  
José Manuel Vila-Fungueiriño ◽  
Beatriz Rivas-Murias ◽  
Juan Rubio-Zuazo ◽  
Adrian Carretero-Genevrier ◽  
Massimo Lazzari ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Beam ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Deposition ◽  
Chemical Solution ◽  
Solution Methods ◽  
Epitaxial Oxide

Chemical solution methods for thin-film deposition constitute an affordable alternative to high-vacuum physical technologies, like Sputtering, Pulsed Laser Deposition (PLD) or Molecular Beam Epitaxy (MBE).

scholarly journals Measurements Of Stress Evolution During Thin Film Deposition

1996 ◽  
Vol 428 ◽  
Author(s):  
E. Chason ◽  
J. A. Floro
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Film Stress ◽  
Radius Of Curvature ◽  
Stress Evolution ◽  
Rectangular Array ◽  
Thin Film Stress ◽  
Ccd Detector

AbstractWe have developed a technique for measuring thin film stress during growth by monitoring the wafer curvature. By measuring the deflection of multiple parallel laser beams with a CCD detector, the sensitivity to vibration is reduced and a radius of curvature limit of 4 km has been obtained in situ. This technique also enables us to obtain a 2-dimensional profile of the surface curvature from the simultaneous reflection of a rectangular array of beams. Results from the growth of SiGe alloy films are presented to demonstrate the unique information that can be obtained during growth.

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