Comparison of the passivation effects on self- and non-self-aligned InP/InGaAs/InP double heterostructure bipolar transistors by low-temperature deposited SiNx

2004 ◽  
Vol 96 (1) ◽  
pp. 777-783 ◽  
Author(s):  
Z. Jin ◽  
W. Prost ◽  
S. Neumann ◽  
F.-J. Tegude
Keyword(s):  
Low Temperature ◽  
Bipolar Transistors ◽  
Double Heterostructure

Silicon Bipolar Transistors Fabricated using Ion Implantation and Laser Annealing

1980 ◽  
Vol 1 ◽  
Author(s):  
Nobuyoshi Natsuaki ◽  
Takao Miyazaki ◽  
Makoto Ohkura ◽  
Toru Nakamura ◽  
Masao Tamura ◽  
...  
Keyword(s):  
Low Temperature ◽  
Laser Pulse ◽  
Laser Irradiation ◽  
Ruby Laser ◽  
Laser Annealing ◽  
Bipolar Transistors ◽  
Pulse Irradiation ◽  
Irradiation Effects ◽  
Furnace Annealing ◽  
Temperature Furnace

ABSTRACTBipolar transistors with laser annealed base and emitter, as well as those with furnace annealed base and laser annealed emitter, have been successfully fabricated using Q-switched ruby laser pulse irradiation. The performance of laser asannealed transistors is rather poor. However, it can be improved, to some extent, by relatively low temperature furnace annealing after laser irradiation. DC and RF characteristics of laser annealed transistors are presented in conjunction with laser irradiation effects on the characteristics of conventionally fabricated transistors.

Low‐temperature migration enhanced epitaxy of base material for AlGaAs/GaAs heterojunction bipolar transistors

1993 ◽  
Vol 63 (6) ◽  
pp. 809-811 ◽  
Author(s):  
Kai Zhang ◽  
Der‐Woei Wu ◽  
Jianming Fu ◽  
D. L. Miller ◽  
Mike Fukuda ◽  
...  
Keyword(s):  
Low Temperature ◽  
Heterojunction Bipolar Transistors ◽  
Base Material ◽  
Bipolar Transistors ◽  
Migration Enhanced Epitaxy

Electroluminescence properties of GaInP/GaAs:Er,O/GaInP double heterostructure light-emitting diodes at low temperature

2009 ◽  
Vol 31 (9) ◽  
pp. 1323-1326 ◽  
Author(s):  
Yoshikazu Terai ◽  
Takehiro Tokuno ◽  
Hideki Ichida ◽  
Yasuo Kanematsu ◽  
Yasufumi Fujiwara
Keyword(s):  
Low Temperature ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Double Heterostructure

Base-emitter injection characterization in low-temperature pseudo-heterojunction bipolar transistors

1990 ◽  
Vol 37 (10) ◽  
pp. 2222-2229 ◽  
Author(s):  
K. Yano ◽  
K. Nakazato ◽  
M. Miyamoto ◽  
M. Aoki ◽  
K. Shimohigashi
Keyword(s):  
Low Temperature ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors
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