Fabrication and characterization of bipolar transistors with in-situ doped low-temperature (800 degrees C) epitaxial silicon

1989 ◽  
Vol 10 (8) ◽  
pp. 383-385 ◽  
Author(s):  
S. Ohi ◽  
R. Burger ◽  
R. Reif
2000 ◽  
Vol 44 (9) ◽  
pp. 1543-1548 ◽  
Author(s):  
A Orpella ◽  
J Puigdollers ◽  
D Bardés ◽  
R Alcubilla ◽  
L.F Marsal ◽  
...  

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