Well-behaved metal–oxide–semiconductor capacitor characteristics of hafnium silicate films deposited in an atomic layer deposition mode by vapor–liquid hybrid deposition process

2004 ◽  
Vol 84 (25) ◽  
pp. 5097-5099 ◽  
Author(s):  
Y. Xuan ◽  
D. Hojo ◽  
T. Yasuda
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Atomic Layer ◽  
Deposition Process ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Hafnium Silicate ◽  
Layer Deposition ◽  
Metal Oxide Semiconductor Capacitor ◽  
Deposition Mode

Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications

2009 ◽  
Vol 106 (11) ◽  
pp. 114107 ◽  
Author(s):  
D. Hoogeland ◽  
K. B. Jinesh ◽  
F. Roozeboom ◽  
W. F. A. Besling ◽  
M. C. M. van de Sanden ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Layer Deposition ◽  
Metal Oxide Semiconductor Capacitor

Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition

2010 ◽  
Vol 107 (10) ◽  
pp. 106104 ◽  
Author(s):  
D. Gregušová ◽  
R. Stoklas ◽  
Ch. Mizue ◽  
Y. Hori ◽  
J. Novák ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxide ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Trap States ◽  
Semiconductor Structures ◽  
Layer Deposition
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