Effect of annealing ambient and temperature on the electrical characteristics of atomic layer deposition Al2O3/In0.53Ga0.47As metal-oxide-semiconductor capacitors and MOSFETs
2011 ◽
Vol 14
(5)
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pp. G27
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2009 ◽
Vol 48
(4)
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pp. 04C009
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2004 ◽
Vol 33
(8)
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pp. 912-915
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