Efficiency and harmonic enhancement trends in GaN-based Gunn diodes: Ensemble Monte Carlo analysis

Steady-state and transient electron characteristics of wurtzite Zn1xMgxO are studied in detail. An ensemble Monte Carlo model is established considering alloy scattering. From the steady-state characteristics, it is found that alloy scattering makes the drift velocity decrease at different electric fields. For 10% Mg, the transient peak drift velocity decreases from 2.48×107cm/s to 2.13×107cm/s at 2000 kV/cm. While for 20% Mg, a higher electric field is needed for the onset of the overshoot, which corresponds to the larger peak electric field in the steady-state velocity-field characteristics.

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Ensemble Monte Carlo analysis of subpicosecond transient electron transport in cubic and hexagonal silicon carbide for high power SiC-MESFET devices

International Journal of Modern Physics B ◽

10.1142/s0217979215501076 ◽

2015 ◽

Vol 29 (16) ◽

pp. 1550107 ◽

Cited By ~ 2

Author(s):

Youcef Belhadji ◽

Benyounes Bouazza ◽

Fateh Moulahcene ◽

Nordine Massoum

Keyword(s):

Silicon Carbide ◽

Monte Carlo ◽

High Temperature ◽

Electron Transport ◽

Band Structure ◽

Monte Carlo Analysis ◽

Structure Model ◽

Velocity Overshoot ◽

Ensemble Monte Carlo ◽

Band Structure Model

In a comparative framework, an ensemble Monte Carlo was used to elaborate the electron transport characteristics in two different silicon carbide (SiC) polytypes 3C-SiC and 4H-SiC. The simulation was performed using three-valley band structure model. These valleys are spherical and nonparabolic. The aim of this work is to forward the trajectory of 20,000 electrons under high-flied (from 50 kV to 600 kV) and high-temperature (from 200 K to 700 K). We note that this model has already been used in other studies of many Zincblende or Wurtzite semiconductors. The obtained results, compared with results found in many previous studies, show a notable drift velocity overshoot. This last appears in subpicoseconds transient regime and this overshoot is directly attached to the applied electric field and lattice temperature.

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Comparative Monte Carlo analysis of InP- and GaN-based Gunn diodes

Journal of Applied Physics ◽

10.1063/1.4863399 ◽

2014 ◽

Vol 115 (4) ◽

pp. 044510 ◽

Cited By ~ 8

Author(s):

S. García ◽

S. Pérez ◽

I. Íñiguez-de-la-Torre ◽

J. Mateos ◽

T. González

Keyword(s):

Monte Carlo ◽

Monte Carlo Analysis ◽

Gunn Diodes

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Harmonic Extraction in Graphene: Monte Carlo Analysis of the Substrate Influence

Materials ◽

10.3390/ma14175108 ◽

2021 ◽

Vol 14 (17) ◽

pp. 5108

Author(s):

Elena Pascual ◽

José M. Iglesias ◽

María J. Martín ◽

Raúl Rengel

Keyword(s):

Monte Carlo ◽

Electric Fields ◽

Strong Field ◽

Monte Carlo Analysis ◽

High Order ◽

Harmonic Intensity ◽

Ensemble Monte Carlo ◽

Ac Electric Fields ◽

High Order Harmonic ◽

Harmonic Extraction

Graphene on different substrates, such as SiO2, h-BN and Al2O3, has been subjected to oscillatory electric fields to analyse the response of the carriers in order to explore the generation of terahertz radiation by means of high-order harmonic extraction. The properties of the ensemble Monte Carlo simulator employed for such study have allowed us to evaluate the high-order harmonic intensity and the spectral density of velocity fluctuations under different amplitudes of the periodic electric field, proving that strong field conditions are preferable for the established goal. Furthermore, by comparison of both harmonic intensity and noise level, the threshold bandwidth for harmonic extraction has been determined. The results have shown that graphene on h-BN presents the best featuring of the cases under analysis and that in comparison to III–V semiconductors, it is a very good option for high-order harmonic extraction under AC electric fields with large amplitudes.

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