Fully Quantum-Mechanical Calculation of Hole Direct Tunneling Current in Ultrathin Gate Oxide p-Channel Metal-Oxide-Semiconductor Devices

Hideyuki Iwata

doi:10.1143/jjap.41.552

Fully Quantum-Mechanical Calculation of Hole Direct Tunneling Current in Ultrathin Gate Oxide p-Channel Metal-Oxide-Semiconductor Devices

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.552 ◽

2002 ◽

Vol 41 (Part 1, No. 2A) ◽

pp. 552-556 ◽

Cited By ~ 3

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Tunneling Current ◽

Gate Oxide ◽

Quantum Mechanical Calculation ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Mechanical Calculation ◽

Direct Tunneling Current

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Fully Quantum-Mechanical Calculation of Gate Tunneling Current in Ultrathin Silicon-on-Insulator Metal-Oxide-Semiconductor Devices

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.l600 ◽

2001 ◽

Vol 40 (Part 2, No. 6B) ◽

pp. L600-L602

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Tunneling Current ◽

Quantum Mechanical Calculation ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Mechanical Calculation ◽

Gate Tunneling

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Fully Quantum-Mechanical Modeling of Tunneling Current in Ultrathin Gate Oxide Metal-Oxide-Semiconductor Devices

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.4496 ◽

2001 ◽

Vol 40 (Part 1, No. 7) ◽

pp. 4496-4500 ◽

Cited By ~ 8

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Tunneling Current ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Mechanical Modeling

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Experimental Evidence of Inversion-Layer Mobility Lowering in Ultrathin Gate Oxide Metal-Oxide-Semiconductor Field-Effect-Transistors with Direct Tunneling Current

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.2348 ◽

2002 ◽

Vol 41 (Part 1, No. 4B) ◽

pp. 2348-2352 ◽

Cited By ~ 62

Author(s):

Shin-ichi Takagi ◽

Mariko Takayanagi

Keyword(s):

Metal Oxide ◽

Experimental Evidence ◽

Field Effect ◽

Field Effect Transistors ◽

Inversion Layer ◽

Tunneling Current ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Direct Tunneling Current

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Quantum-Mechanical Simulation of Gate Tunneling Current in Accumulated n-Channel Metal-Oxide-Semiconductor Devices with n+-Polysilicon Gates

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.5094 ◽

2002 ◽

Vol 41 (Part 1, No. 8) ◽

pp. 5094-5097 ◽

Cited By ~ 1

Author(s):

Hideyuki Iwata ◽

Toshihiro Matsuda ◽

Takashi Ohzone

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Mechanical Simulation ◽

Gate Tunneling

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Quantum-mechanical study of the direct tunneling current in metal-oxide-semiconductor structures

Journal of Applied Physics ◽

10.1063/1.1985976 ◽

2005 ◽

Vol 98 (2) ◽

pp. 024506 ◽

Cited By ~ 6

Author(s):

E. P. Nakhmedov ◽

K. Wieczorek ◽

H. Burghardt ◽

C. Radehaus

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Semiconductor Structures ◽

Direct Tunneling ◽

Mechanical Study ◽

Quantum Mechanical Study ◽

Direct Tunneling Current

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Analytic model for direct tunneling current in polycrystalline silicon-gate metal–oxide–semiconductor devices

Applied Physics Letters ◽

10.1063/1.123060 ◽

1999 ◽

Vol 74 (3) ◽

pp. 457-459 ◽

Cited By ~ 183

Author(s):

Leonard F. Register ◽

Elyse Rosenbaum ◽

Kevin Yang

Keyword(s):

Metal Oxide ◽

Polycrystalline Silicon ◽

Semiconductor Devices ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Analytic Model ◽

Direct Tunneling ◽

Direct Tunneling Current

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Quantum mechanical study of trapped charge relaxation characteristics in metal-oxide-semiconductor devices

Proceedings of IEEE. IEEE Region 10 Conference. TENCON 99. 'Multimedia Technology for Asia-Pacific Information Infrastructure' (Cat. No.99CH37030) ◽

10.1109/tencon.1999.818624 ◽

2003 ◽

Author(s):

Q.D. Mohd Khosru ◽

Md. Nasir Uddin ◽

M. Rezwan Khan

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Charge Relaxation ◽

Mechanical Study ◽

Quantum Mechanical Study ◽

Relaxation Characteristics ◽

Trapped Charge

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Image Force Effect on Tunneling Current for Ultra Thin High-K Dielectric Material Al2O3 Based Metal Oxide Semiconductor Devices

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2015.1812 ◽

2015 ◽

Vol 10 (5) ◽

pp. 645-648 ◽

Cited By ~ 16

Author(s):

N. P. Maity ◽

R. Maity ◽

R. K. Thapa ◽

S. Baishya

Keyword(s):

Metal Oxide ◽

Dielectric Material ◽

Semiconductor Devices ◽

Tunneling Current ◽

Image Force ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Force Effect ◽

High K ◽

High K Dielectric

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Electrical Properties of 4H-Silicon Carbide Complementary Metal–Oxide–Semiconductor Devices with Wet-Processed Gate Oxide

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c087 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C087 ◽

Cited By ~ 6

Author(s):

Mitsuo Okamoto ◽

Tsutomu Yatsuo ◽

Kenji Fukuda ◽

Hajime Okumura

Keyword(s):

Silicon Carbide ◽

Electrical Properties ◽

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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A Low-Leakage Epitaxial High-κ Gate Oxide for Germanium Metal–Oxide–Semiconductor Devices

ACS Applied Materials & Interfaces ◽

10.1021/acsami.5b10661 ◽

2016 ◽

Vol 8 (8) ◽

pp. 5416-5423 ◽

Cited By ~ 6

Author(s):

Chengqing Hu ◽

Martin D. McDaniel ◽

Aiting Jiang ◽

Agham Posadas ◽

Alexander A. Demkov ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Low Leakage

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