Metalorganic chemical vapor deposition growth of high-quality InAs∕GaSb type II superlattices on (001) GaAs substrates

2006 ◽  
Vol 88 (7) ◽  
pp. 072104 ◽  
Author(s):  
X. B. Zhang ◽  
J. H. Ryou ◽  
R. D. Dupuis ◽  
A. Petschke ◽  
S. Mou ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Type Ii ◽  
High Quality ◽  
Chemical Vapor Deposition Growth ◽  
Gaas Substrates ◽  
Type Ii Superlattices ◽  
Metalorganic Chemical

High-Quality InSb Growth on GaAs and Si by Low-Pressure Metalorganic Chemical Vapor Deposition

1992 ◽  
Vol 281 ◽  
Author(s):  
Y. H. Choi ◽  
R. Sudharsanan ◽  
C. Besikci ◽  
E. Bigan ◽  
M. Razeghi
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Si Substrates ◽  
Gaas Substrates ◽  
Metalorganic Chemical

ABSTRACTWe report the first InSb film growth on Si by low-pressure metalorganic chemical vapor deposition. High-quality layers of InSb have been grown on Si and GaAs substrates. InSb films displayed mirror-like morphology on both substrates. X-ray full width at half maximum of 171 arcsec on GaAs and 361 arcsec on Si for a InSb layer thickness of 3.1 μm were measured. Room-temperature Hall mobilities of 67,000 and 48,000 cm2/V.s with carrier concentration of 1.5×1016 and 2.3×1016 cm−3 have been achieved for InSb films grown on GaAs and Si substrates, respectively. A 4.8 μ-thick InSb film on GaAs exhibited mobility of 76,200 cm2/Vs at 240 K.

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