Controlled in situ boron doping of diamond thin films using solution phase

2006 ◽  
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pp. 124506 ◽  
Author(s):  
M. Roy ◽  
A. K. Dua ◽  
J. Nuwad ◽  
K. G. Girija ◽  
A. K. Tyagi ◽  
...  
1997 ◽  
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pp. 521-525 ◽  
Author(s):  
X.Z. Liao ◽  
R.J. Zhang ◽  
C.S. Lee ◽  
S.Tong Lee ◽  
Y.W. Lam

1989 ◽  
Vol 55 (11) ◽  
pp. 1121-1123 ◽  
Author(s):  
J. Mort ◽  
D. Kuhman ◽  
M. Machonkin ◽  
M. Morgan ◽  
F. Jansen ◽  
...  

1993 ◽  
Vol 11 (3) ◽  
pp. 569-573 ◽  
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R. Shinar ◽  
M. Leksono ◽  
H. R. Shanks

2002 ◽  
Vol 11 (11) ◽  
pp. 1871-1875 ◽  
Author(s):  
Jinlong Luo ◽  
Xuantong Ying ◽  
Peinan Wang ◽  
Liangyao Chen

2009 ◽  
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pp. 256-262 ◽  
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Guangyu Chai ◽  
Oleg Lupan ◽  
Lee Chow ◽  
Helge Heinrich ◽  
...  

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Fan Liu ◽  
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Jun Weng ◽  
...  

Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.


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