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Influences of annealing in reducing and oxidizing ambients on flatband voltage properties of HfO2 gate stack structures
Journal of Applied Physics
◽
10.1063/1.2721384
◽
2007
◽
Vol 101
(8)
◽
pp. 084118
◽
Cited By ~ 15
Author(s):
K. Ohmori
◽
P. Ahmet
◽
M. Yoshitake
◽
T. Chikyow
◽
K. Shiraishi
◽
...
Keyword(s):
Gate Stack
◽
Flatband Voltage
Download Full-text
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Wide Controllability of Flatband Voltage in La2O3 Gate Stack Structures - Remarkable Advantages of La2O3 over HfO2 -
ECS Meeting Abstracts
◽
10.1149/ma2006-02/22/1124
◽
2006
◽
Keyword(s):
Gate Stack
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Flatband Voltage
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Wide Controllability of Flatband Voltage in La2O3 Gate Stack Structures - Remarkable Advantages of La2O3 over HfO2 -
ECS Transactions
◽
10.1149/1.2355726
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2019
◽
Vol 3
(3)
◽
pp. 351-362
Author(s):
Kenji Ohmori
◽
Parhat Ahmet
◽
Kenji Shiraishi
◽
Kikuo Yamabe
◽
Heiji Watanabe
◽
...
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Gate Stack
◽
Flatband Voltage
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Analysis of flatband voltage shift of metal/high- k /SiO 2 /Si stack based on energy band alignment of entire gate stack
Chinese Physics B
◽
10.1088/1674-1056/23/11/117702
◽
2014
◽
Vol 23
(11)
◽
pp. 117702
◽
Cited By ~ 1
Author(s):
Kai Han
◽
Xiao-Lei Wang
◽
Yong-Gui Xu
◽
Hong Yang
◽
Wen-Wu Wang
Keyword(s):
Energy Band
◽
Band Alignment
◽
Gate Stack
◽
Voltage Shift
◽
High K
◽
Flatband Voltage
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Thickness and material dependence of capping layers on flatband voltage (VFB) and equivalent oxide thickness (EOT) with high-k gate dielectric/metal gate stack for gate-first process applications
Microelectronic Engineering
◽
10.1016/j.mee.2011.01.034
◽
2012
◽
Vol 89
◽
pp. 34-36
◽
Cited By ~ 4
Author(s):
Changhwan Choi
Keyword(s):
Gate Dielectric
◽
Oxide Thickness
◽
Equivalent Oxide Thickness
◽
Metal Gate
◽
Gate Stack
◽
High K
◽
Flatband Voltage
◽
High K Gate Dielectric
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Wide Controllability of Flatband Voltage in La2O3 Gate Stack Structures ? Remarkable Advantages of La2O3 over HfO2 ?
10.7567/ssdm.2006.j-1-3
◽
2006
◽
Author(s):
K. Ohmori
◽
P. Ahmet
◽
K. Shiraishi
◽
K. Yamabe
◽
H. Watanabe
◽
...
Keyword(s):
Gate Stack
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Flatband Voltage
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Controllability of flatband voltage in high-k gate stack structures - remarkable advantages of La/sub 2/O/sub 3/ over HfO/sub 2/
2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings
◽
10.1109/icsict.2006.306256
◽
2006
◽
Author(s):
K. Ohmori
◽
P. Ahmet
◽
K. Shiraishi
◽
K. Yamabe
◽
H. Watanabe
◽
...
Keyword(s):
Gate Stack
◽
High K
◽
Flatband Voltage
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Origin of Flatband Voltage Shift in Poly-Si/Hf-Based High-k Gate Dielectrics and Flatband Voltage Dependence on Gate Stack Structure
Japanese Journal of Applied Physics
◽
10.1143/jjap.43.7843
◽
2004
◽
Vol 43
(11B)
◽
pp. 7843-7847
◽
Cited By ~ 6
Author(s):
Makoto Miyamura
◽
Koji Masuzaki
◽
Heiji Watanabe
◽
Nobuyuki Ikarashi
◽
Toru Tatsumi
Keyword(s):
Voltage Dependence
◽
Gate Dielectrics
◽
Gate Stack
◽
Voltage Shift
◽
High K
◽
Flatband Voltage
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Plasma surface interactions in nanoscale processing: Preservation of low-k integrity and high-k gate-stack etching with Si selectivity
10.31274/etd-180810-312
◽
2012
◽
Author(s):
Juline Shoeb
Keyword(s):
Surface Interactions
◽
Gate Stack
◽
Plasma Surface
◽
Plasma Surface Interactions
◽
High K
◽
Low K
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Ultrascaled Multidomain P(VDF-TrFE) Organic Ferroelectric Gate Stack to the Rescue
2021 IEEE Latin America Electron Devices Conference (LAEDC)
◽
10.1109/laedc51812.2021.9437926
◽
2021
◽
Author(s):
Khoirom Johnson Singh
◽
Anand Bulusu
◽
Sudeb Dasgupta
Keyword(s):
Gate Stack
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Hf‐ and Ti‐Based Organic/Inorganic Hybrid Dielectrics Synthesized via Chemical Vapor Phase for Advanced Gate Stack in Flexible Electronic Devices
Advanced Electronic Materials
◽
10.1002/aelm.202001197
◽
2021
◽
pp. 2001197
Author(s):
Min Ju Kim
◽
Changhyeon Lee
◽
Jaejoong Jeong
◽
Seongho Kim
◽
Tae In Lee
◽
...
Keyword(s):
Vapor Phase
◽
Electronic Devices
◽
Chemical Vapor
◽
Gate Stack
◽
Inorganic Hybrid
◽
Flexible Electronic
◽
Flexible Electronic Devices
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