Wide Controllability of Flatband Voltage in La2O3 Gate Stack Structures - Remarkable Advantages of La2O3 over HfO2 -

2019 ◽  
Vol 3 (3) ◽  
pp. 351-362
Author(s):  
Kenji Ohmori ◽  
Parhat Ahmet ◽  
Kenji Shiraishi ◽  
Kikuo Yamabe ◽  
Heiji Watanabe ◽  
...  
Keyword(s):  
Gate Stack ◽  
Flatband Voltage

Influences of annealing in reducing and oxidizing ambients on flatband voltage properties of HfO2 gate stack structures

2007 ◽  
Vol 101 (8) ◽  
pp. 084118 ◽  
Author(s):  
K. Ohmori ◽  
P. Ahmet ◽  
M. Yoshitake ◽  
T. Chikyow ◽  
K. Shiraishi ◽  
...  
Keyword(s):  
Gate Stack ◽  
Flatband Voltage

Analysis of flatband voltage shift of metal/high- k /SiO 2 /Si stack based on energy band alignment of entire gate stack

2014 ◽  
Vol 23 (11) ◽  
pp. 117702 ◽  
Author(s):  
Kai Han ◽  
Xiao-Lei Wang ◽  
Yong-Gui Xu ◽  
Hong Yang ◽  
Wen-Wu Wang
Keyword(s):  
Energy Band ◽  
Band Alignment ◽  
Gate Stack ◽  
Voltage Shift ◽  
High K ◽  
Flatband Voltage

Wide Controllability of Flatband Voltage in La2O3 Gate Stack Structures ? Remarkable Advantages of La2O3 over HfO2 ?

2006 ◽  
Author(s):  
K. Ohmori ◽  
P. Ahmet ◽  
K. Shiraishi ◽  
K. Yamabe ◽  
H. Watanabe ◽  
...  
Keyword(s):  
Gate Stack ◽  
Flatband Voltage

Origin of Flatband Voltage Shift in Poly-Si/Hf-Based High-k Gate Dielectrics and Flatband Voltage Dependence on Gate Stack Structure

2004 ◽  
Vol 43 (11B) ◽  
pp. 7843-7847 ◽  
Author(s):  
Makoto Miyamura ◽  
Koji Masuzaki ◽  
Heiji Watanabe ◽  
Nobuyuki Ikarashi ◽  
Toru Tatsumi
Keyword(s):  
Voltage Dependence ◽  
Gate Dielectrics ◽  
Gate Stack ◽  
Voltage Shift ◽  
High K ◽  
Flatband Voltage
Sign in / Sign up

Export Citation Format

Share Document