Constant-phase-element (CPE) modeling of ferroelectric random-access memory lead zirconate-titanate (PZT) capacitors

Journal of Applied Physics ◽

10.1063/1.2723194 ◽

2007 ◽

Vol 101 (9) ◽

pp. 094112 ◽

Author(s):

Finlay D. Morrison ◽

Dong Jin Jung ◽

James F. Scott

Keyword(s):

Lead Zirconate Titanate ◽

Constant Phase Element ◽

Random Access ◽

Random Access Memory ◽

Lead Zirconate ◽

Access Memory ◽

Ferroelectric Random Access Memory ◽

Zirconate Titanate

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Introduction of Selectively Nucleated Lateral Crystallization of Lead Zirconate Titanate Thin Films for Fabrication of High-Performance Ferroelectric Random Access Memory

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.6343 ◽

2000 ◽

Vol 39 (Part 1, No. 11) ◽

pp. 6343-6347 ◽

Author(s):

Jang-Sik Lee ◽

Seung-Ki Joo

Keyword(s):

Lead Zirconate Titanate ◽

High Performance ◽

Random Access ◽

Random Access Memory ◽

Lead Zirconate ◽

Access Memory ◽

Ferroelectric Random Access Memory ◽

Zirconate Titanate ◽

Lateral Crystallization

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Effect of Annealing and Hydrogen on Properties of Electrodeposited Platinum Electrode and Lead-Zirconate-Titanate Films for Ferroelectric Random Access Memory Applications

Journal of The Electrochemical Society ◽

10.1149/1.2030259 ◽

2005 ◽

Vol 152 (10) ◽

pp. C688

Author(s):

Kazuo Kondo ◽

Keiji Watanabe ◽

Yuji Abe ◽

Junko Haji ◽

Masaru Shimizu

Keyword(s):

Lead Zirconate Titanate ◽

Platinum Electrode ◽

Random Access ◽

Random Access Memory ◽

Lead Zirconate ◽

Access Memory ◽

Ferroelectric Random Access Memory ◽

Zirconate Titanate ◽

Memory Applications

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Ferroelectric random access memory with high electric properties and high production yield realized by employing an AlOx underlying layer of Pt bottom electrode for a La-doped lead zirconate titanate capacitor

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/aae899 ◽

2018 ◽

Vol 58 (1) ◽

pp. 016503 ◽

Author(s):

Wensheng Wang ◽

Kenji Nomura ◽

Ko Nakamura ◽

Takashi Eshita ◽

Soichiro Ozawa ◽

...

Keyword(s):

Lead Zirconate Titanate ◽

Bottom Electrode ◽

Random Access ◽

Random Access Memory ◽

Lead Zirconate ◽

Electric Properties ◽

Access Memory ◽

Ferroelectric Random Access Memory ◽

High Production ◽

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Effect of lanthanum doping on the electrical properties of sol-gel derived ferroelectric lead–zirconate–titanate for ultra-large-scale integration dynamic random access memory applications

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.586933 ◽

1993 ◽

Vol 11 (4) ◽

pp. 1302 ◽

Author(s):

C. Sudhama

Keyword(s):

Lead Zirconate Titanate ◽

Large Scale ◽

Sol Gel ◽

Random Access ◽

Lead Zirconate ◽

Access Memory ◽

Lanthanum Doping ◽

Large Scale Integration ◽

Memory Applications ◽

Scale Integration

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1T-Type Flexible Organic Ferroelectric Random Access Memory using VDF/TrFE Copolymer

2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics ◽

10.1109/isaf.2007.4393161 ◽

2007 ◽

Author(s):

J. Karasawa

Keyword(s):

Random Access ◽

Random Access Memory ◽

Access Memory ◽

Ferroelectric Random Access Memory

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Effect of imprint on operation and reliability of ferroelectric random access memory (FeRAM)

IEEE Transactions on Electron Devices ◽

10.1109/16.954465 ◽

2001 ◽

Vol 48 (10) ◽

pp. 2266-2272 ◽

Author(s):

N. Inoue ◽

Y. Hayashi

Keyword(s):

Random Access ◽

Random Access Memory ◽

Access Memory ◽

Ferroelectric Random Access Memory

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A File System Implementation for Microcontroller Using Ferroelectric Random Access Memory

Information Technology Journal ◽

10.3923/itj.2003.52.57 ◽

2002 ◽

Vol 2 (1) ◽

pp. 52-57 ◽

Author(s):

W.L. Tse . ◽

W. L. Chan .

Keyword(s):

File System ◽

Random Access ◽

Random Access Memory ◽

System Implementation ◽

Access Memory ◽

Ferroelectric Random Access Memory

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Device modeling of ferroelectric memory field-effect transistor for the application of ferroelectric random access memory

IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control ◽

10.1109/tuffc.2003.1176521 ◽

2003 ◽

Vol 50 (1) ◽

pp. 5-14 ◽

Author(s):

Hang-Ting Lue ◽

Chien-Jang Wu ◽

Tseung-Yuen Tseng

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Random Access ◽

Random Access Memory ◽

Device Modeling ◽

Access Memory ◽

Ferroelectric Random Access Memory ◽

Effect Transistor ◽

Ferroelectric Memory

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Stable Readout Circuit for Ferroelectric Random Access Memory Using Complementary Metal–Oxide–Semiconductor-Inverter-Based Capacitive-Feedback Charge-Integration Scheme

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.04de10 ◽

2010 ◽

Vol 49 (4) ◽

pp. 04DE10

Author(s):

Koji Kotani ◽

Yohei Koshimoto ◽

Takashi Ito

Keyword(s):

Random Access ◽

Complementary Metal Oxide Semiconductor ◽

Random Access Memory ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Integration Scheme ◽

Readout Circuit ◽

Access Memory ◽

Ferroelectric Random Access Memory ◽

Charge Integration

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Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2018.2797543 ◽

2018 ◽

Vol 65 (8) ◽

pp. 1708-1714 ◽

Author(s):

A. L. Bosser ◽

V. Gupta ◽

A. Javanainen ◽

G. Tsiligiannis ◽

S. D. LaLumondiere ◽

...

Keyword(s):

Random Access ◽

Random Access Memory ◽

Single Event ◽

Access Memory ◽

Single Event Effects ◽

Ferroelectric Random Access Memory

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