Stable Readout Circuit for Ferroelectric Random Access Memory Using Complementary Metal–Oxide–Semiconductor-Inverter-Based Capacitive-Feedback Charge-Integration Scheme

2010 ◽  
Vol 49 (4) ◽  
pp. 04DE10
Author(s):  
Koji Kotani ◽  
Yohei Koshimoto ◽  
Takashi Ito
Keyword(s):  
Random Access ◽  
Complementary Metal Oxide Semiconductor ◽  
Random Access Memory ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Integration Scheme ◽  
Readout Circuit ◽  
Access Memory ◽  
Ferroelectric Random Access Memory ◽  
Charge Integration

Characteristics of Dual Polymetal (W/WNx/Poly-Si) Gate Complementary Metal Oxide Semiconductor for 0.1 µm Dynamic Random Access Memory Technology

2000 ◽  
Vol 39 (Part 1, No. 4B) ◽  
pp. 1969-1973 ◽  
Author(s):  
Yong–Hae Kim ◽  
Sung–Keun Chang ◽  
Seon–Soon Kim ◽  
Jun–Gi Choi ◽  
Sang–Hee Lee ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Random Access ◽  
Complementary Metal Oxide Semiconductor ◽  
Random Access Memory ◽  
Metal Oxide Semiconductor ◽  
Dynamic Random Access Memory ◽  
Oxide Semiconductor ◽  
Access Memory
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