Atomic layer deposition of insulating nitride interfacial layers for germanium metal oxide semiconductor field effect transistors with high-κ oxide/tungsten nitride gate stacks

Applied Physics Letters ◽

10.1063/1.2741609 ◽

2007 ◽

Vol 90 (21) ◽

pp. 212104 ◽

Author(s):

Kyoung H. Kim ◽

Roy G. Gordon ◽

Andrew Ritenour ◽

Dimitri A. Antoniadis

Keyword(s):

Atomic Layer Deposition ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Tungsten Nitride ◽

Gate Stacks ◽

Interfacial Layers ◽

Layer Deposition

Download Full-text

The Influence of Hf-Composition on Atomic Layer Deposition HfSiON Gated Metal–Oxide–Semiconductor Field-Effect Transistors after Channel-Hot-Carrier Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c009 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C009 ◽

Author(s):

Shuang-Yuan Chen ◽

Hung-Wen Chen ◽

Chuan-Hsi Liu ◽

Li-Wei Cheng

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Layer Deposition ◽

Hot Carrier Stress

Download Full-text

GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition

Journal of Electronic Materials ◽

10.1007/s11664-004-0220-9 ◽

2004 ◽

Vol 33 (8) ◽

pp. 912-915 ◽

Author(s):

P. D. Ye ◽

G. D. Wilk ◽

B. Yang ◽

J. Kwo ◽

H. -J. L. Gossmann ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition

Download Full-text

Admittance and subthreshold characteristics of atomic-layer-deposition Al2O3 on In0.53Ga0.47As in surface and buried channel flatband metal-oxide-semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.4720940 ◽

2012 ◽

Vol 111 (10) ◽

pp. 104112 ◽

Author(s):

G. W. Paterson ◽

S. J. Bentley ◽

M. C. Holland ◽

I. G. Thayne ◽

J. Ahn ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Buried Channel ◽

Layer Deposition

Download Full-text

Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors

IEEE Electron Device Letters ◽

10.1109/led.2016.2581175 ◽

2016 ◽

pp. 1-1 ◽

Author(s):

Quang Luc ◽

Shou Cheng ◽

Po Chang ◽

Huy Do ◽

Jin Chen ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition

Download Full-text

Low interface defect density of atomic layer deposition BeO with self-cleaning reaction for InGaAs metal oxide semiconductor field effect transistors

Applied Physics Letters ◽

10.1063/1.4833815 ◽

2013 ◽

Vol 103 (22) ◽

pp. 223504 ◽

Author(s):

H. S. Shin ◽

J. H. Yum ◽

D. W. Johnson ◽

H. R. Harris ◽

Todd. W. Hudnall ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Defect Density ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Interface Defect

Download Full-text

Impact of La2O3 interfacial layers on InGaAs metal-oxide-semiconductor interface properties in Al2O3/La2O3/InGaAs gate stacks deposited by atomic-layer-deposition

Journal of Applied Physics ◽

10.1063/1.4929650 ◽

2015 ◽

Vol 118 (8) ◽

pp. 085309 ◽

Author(s):

C.-Y. Chang ◽

O. Ichikawa ◽

T. Osada ◽

M. Hata ◽

H. Yamada ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Properties ◽

Gate Stacks ◽

Semiconductor Interface ◽

Interfacial Layers ◽

Layer Deposition

Download Full-text

TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeOxNy Passivation Layer

Electrochemical and Solid-State Letters ◽

10.1149/1.3559770 ◽

2011 ◽

Vol 14 (5) ◽

pp. G27 ◽

Author(s):

Qi Xie ◽

Jan Musschoot ◽

Marc Schaekers ◽

Matty Caymax ◽

Annelies Delabie ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Semiconductor Devices ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Layer Deposition

Download Full-text

Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition

Applied Surface Science ◽

10.1016/j.apsusc.2018.05.191 ◽

2018 ◽

Vol 461 ◽

pp. 255-259 ◽

Author(s):

R. Stoklas ◽

D. Gregušová ◽

S. Hasenöhrl ◽

E. Brytavskyi ◽

M. Ťapajna ◽

...

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Heterostructure ◽

Layer Deposition ◽

Heterostructure Field Effect Transistors

Download Full-text

Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2by atomic layer deposition: leakage current and density of states reduction

Semiconductor Science and Technology ◽

10.1088/1361-6641/aa5fcb ◽

2017 ◽

Vol 32 (4) ◽

pp. 045018 ◽

Author(s):

R Stoklas ◽

D Gregušová ◽

M Blaho ◽

K Fröhlich ◽

J Novák ◽

...

Keyword(s):

Field Effect ◽

Oxygen Plasma ◽

Field Effect Transistors ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Oxygen Plasma Treatment ◽

Semiconductor Heterostructure ◽

Layer Deposition ◽

Heterostructure Field Effect Transistors

Download Full-text

GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

Applied Physics Letters ◽

10.1063/1.1590743 ◽

2003 ◽

Vol 83 (1) ◽

pp. 180-182 ◽

Author(s):

P. D. Ye ◽

G. D. Wilk ◽

B. Yang ◽

J. Kwo ◽

S. N. G. Chu ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Effect Transistor

Download Full-text