Fully integrated detection of single magnetic beads in complementary metal-oxide-semiconductor

2008 ◽  
Vol 103 (4) ◽  
pp. 046101 ◽  
Author(s):  
Octavian Florescu ◽  
Moritz Mattmann ◽  
Bernhard Boser
Keyword(s):  
Metal Oxide ◽  
Magnetic Beads ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Fully Integrated ◽  
Integrated Detection

scholarly journals Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry

2005 ◽  
Vol 87 (4) ◽  
pp. 043507 ◽  
Author(s):  
E. Forsen ◽  
G. Abadal ◽  
S. Ghatnekar-Nilsson ◽  
J. Teva ◽  
J. Verd ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Mass Sensor ◽  
Fully Integrated

Computational study of the staircase molecular conductivity of polyoxovanadates adsorbed on Au(111)

2021 ◽  
Vol 50 (16) ◽  
pp. 5540-5551
Author(s):  
Almudena Notario-Estévez ◽  
Xavier López ◽  
Coen de Graaf
Keyword(s):  
Metal Oxide ◽  
Computational Study ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Molecular Conduction ◽  
Conduction Properties ◽  
Molecular Conductivity

This computational study presents the molecular conduction properties of polyoxovanadates V6O19 (Lindqvist-type) and V18O42, as possible successors of the materials currently in use in complementary metal–oxide semiconductor (CMOS) technology.

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