Multimode interferometric sensors on silicon optimized for fully integrated complementary-metal-oxide-semiconductor chemical-biological sensor systems

2006 ◽  
Vol 23 (4) ◽  
pp. 642 ◽  
Author(s):  
Jeffrey J. Lillie ◽  
Mikkel A. Thomas ◽  
Nan-Marie Jokerst ◽  
Stephen E. Ralph ◽  
Karla A. Dennis ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Sensor Systems ◽  
Fully Integrated ◽  
Interferometric Sensors ◽  
Biological Sensor

scholarly journals Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry

2005 ◽  
Vol 87 (4) ◽  
pp. 043507 ◽  
Author(s):  
E. Forsen ◽  
G. Abadal ◽  
S. Ghatnekar-Nilsson ◽  
J. Teva ◽  
J. Verd ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Mass Sensor ◽  
Fully Integrated

Computational study of the staircase molecular conductivity of polyoxovanadates adsorbed on Au(111)

2021 ◽  
Vol 50 (16) ◽  
pp. 5540-5551
Author(s):  
Almudena Notario-Estévez ◽  
Xavier López ◽  
Coen de Graaf
Keyword(s):  
Metal Oxide ◽  
Computational Study ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Molecular Conduction ◽  
Conduction Properties ◽  
Molecular Conductivity

This computational study presents the molecular conduction properties of polyoxovanadates V6O19 (Lindqvist-type) and V18O42, as possible successors of the materials currently in use in complementary metal–oxide semiconductor (CMOS) technology.

Sign in / Sign up

Export Citation Format

Share Document