Morphology and electronic properties of metal organic molecular beam epitaxy grown ZnO on hydrogen passivated 6H-SiC(0001)

Hexagonal pyramid-like InN nanocolumns were grown on Si(111) substrates via radio-frequency (RF) metal–organic molecular beam epitaxy (MOMBE) together with a substrate nitridation process. The metal–organic precursor served as a group-III source for the growth of InN nanocolumns. The nitridation of Si(111) under flowing N2 RF plasma and the MOMBE growth of InN nanocolumns on the nitrided Si(111) substrates were investigated along with the effects of growth temperature on the structural, optical, and chemical properties of the InN nanocolumns. Based on X-ray diffraction analysis, highly <0001>-oriented, hexagonal InN nanocolumns were grown on the nitride Si(111) substrates. To evaluate the alignment of arrays, the deviation angles of the InN nanocolumns were measured using scanning electron microscopy. Transmission electron microscopy analysis indicated that the InN nanocolumns were single-phase wurtzite crystals having preferred orientations along the c-axis. Raman spectroscopy confirmed the hexagonal structures of the deposited InN nanocolumns.

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Temperature dependence of selective growth of GaN by ammonia-based metal-organic molecular beam epitaxy

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2010.10.195 ◽

2011 ◽

Vol 318 (1) ◽

pp. 450-453 ◽

Cited By ~ 13

Author(s):

Chia-Hung Lin ◽

Ryota Abe ◽

Takahiro Maruyama ◽

Shigeya Naritsuka

Keyword(s):

Molecular Beam Epitaxy ◽

Temperature Dependence ◽

Molecular Beam ◽

Selective Growth ◽

Metal Organic

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Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300001526 ◽

1997 ◽

Vol 2 ◽

Cited By ~ 28

Author(s):

Markus Kamp ◽

M. Mayer ◽

A. Pelzmann ◽

K. J. Ebeling

Keyword(s):

Molecular Beam Epitaxy ◽

Material Properties ◽

Molecular Beam ◽

Group Iii Nitrides ◽

Group Iii ◽

Surface Cracking ◽

Organic Vapor ◽

N Doping ◽

Metal Organic ◽

Uv Leds

Ammonia is investigated as nitrogen precursor for molecular beam epitaxy of group III nitrides. With the particular on-surface cracking approach, NH3 is dissociated directly on the growing surface. By this technique, molecular beam epitaxy becomes a serious competitor to metal organic vapor phase epitaxy. Thermodynamic calculations as well as experimental results reveal insights into the growth mechanisms and its differences to the conventional plasma approach. With this knowledge, homoepitaxially GaN can be grown with record linewidths of 0.5 meV in photoluminescence (4 K). GaN layers on c-plane sapphire also reveal reasonable material properties (photoluminescence linewidth 5 meV, n ≈ 1017 cm−3, μ ≈ 220 cm2/Vs). Beside GaN growth, p- and n-doping of GaN as well as the growth of ternary nitrides are discussed. Using the presented ammonia approach UV-LEDs emitting at 370 nm with linewidths as narrow as 12 nm have been achieved.

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