Continuous current and surface potential models for undoped and lightly doped double-gate metal-oxide-semiconductor field-effect transistors

Oxide Semiconductor ◽

Double Gate ◽

Potential Models ◽

Continuous Current

Analytical solution of fundamental surface potential equations for symmetric double-gate metal-oxide-semiconductor field-effect transistors

International Journal of Electronics ◽

10.1080/00207210902977822 ◽

2009 ◽

Vol 96 (10) ◽

pp. 1023-1038

Author(s):

Sheng Chang ◽

Gaofeng Wang ◽

Qijun Huang ◽

Hao Wang

Keyword(s):

Analytical Solution ◽

Metal Oxide ◽

Surface Potential ◽

Field Effect ◽

Oxide Semiconductor ◽

Explicit Compact Surface-Potential and Drain-Current Models for Generic Asymmetric Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

10.1143/jjap.46.2067 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2067-2072 ◽

Cited By ~ 14

Author(s):

Zhaomin Zhu ◽

Xing Zhou ◽

Karthik Chandrasekaran ◽

Subhash C. Rustagi ◽

Guan Huei See

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Field Effect ◽

Drain Current ◽

Compact Surface ◽

Oxide Semiconductor ◽

A Rigorous and Concise Surface Potential-Based Core Model for the Undoped Symmetric Double-Gate Metal-Oxide-Semiconductor Field Effect Transistors

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2011.1893 ◽

2011 ◽

Vol 8 (9) ◽

pp. 1857-1862

Author(s):

Xukai Zhang ◽

Jin He ◽

Lining Zhang ◽

Jian Zhang ◽

Yong Ma ◽

...

Keyword(s):

Metal Oxide ◽

Surface Potential ◽

Field Effect ◽

Oxide Semiconductor ◽

Core Model ◽

Consideration of Performance Limitation of Sub-100-nm Double-Gate Silicon-on-Insulator (SOI) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)

10.1143/jjap.41.l1096 ◽

2002 ◽

Vol 41 (Part 2, No. 10A) ◽

pp. L1096-L1098 ◽

Cited By ~ 2

Author(s):

Shin-ichiro Yanagi ◽

Yasuhisa Omura

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Double Gate ◽

Performance Limitation

Analytical Models for Symmetric Thin-Film Double-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor-Field-Effect-Transistors

10.1143/jjap.32.4916 ◽

1993 ◽

Vol 32 (Part 1, No. 11A) ◽

pp. 4916-4922 ◽

Cited By ~ 14

Author(s):

Kunihiro Suzuki ◽

Shigeo Satoh ◽

Tetsu Tanaka ◽

Satoshi Ando

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Field Effect ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Analytical Models ◽

Dopant profiling in vertical ultrathin channels of double-gate metal–oxide–semiconductor field-effect transistors by using scanning nonlinear dielectric microscopy

Applied Physics Letters ◽

10.1063/1.1812571 ◽

2004 ◽

Vol 85 (18) ◽

pp. 4139-4141 ◽

Cited By ~ 15

Author(s):

Meishoku Masahara ◽

Shinichi Hosokawa ◽

Takashi Matsukawa ◽

Kazuhiko Endo ◽

Yuuichi Naitou ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Double Gate ◽

Nonlinear Dielectric ◽

Dopant Profiling

Experimental Study of Physical-Vapor-Deposited Titanium Nitride Gate with An n+-Polycrystalline Silicon Capping Layer and Its Application to 20 nm Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

10.7567/jjap.50.04dc14 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DC14 ◽

Cited By ~ 3

Author(s):

Takahiro Kamei ◽

Yongxun Liu ◽

Kazuhiko Endo ◽

Shinichi O'uchi ◽

Junichi Tsukada ◽

...

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Titanium Nitride ◽

Polycrystalline Silicon ◽

Field Effect ◽

Oxide Semiconductor ◽

Double Gate ◽

20 Nm

Simulation of High–κ Dielectrics in Counter Doped Double Gate Metal Oxide Semiconductor Field Effect Transistors

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2010.1061 ◽

2010 ◽

Vol 5 (1) ◽

pp. 43-49

Author(s):

T. George James ◽

Saji Joseph ◽

Vincent Mathew

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

A New Two-Dimensional Analytical Model for Short-Channel Symmetrical Dual-Material Double-Gate Metal–Oxide–Semiconductor Field Effect Transistors

10.1143/jjap.46.3283 ◽

2007 ◽

Vol 46 (6A) ◽

pp. 3283-3290 ◽

Cited By ~ 20

Author(s):

Te-Kuang Chiang ◽

Mei-Li Chen

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Oxide Semiconductor ◽

Double Gate ◽

Two Dimensional ◽

Short Channel ◽

Dual Material

Oscillation of gate leakage current in double-gate metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.2716874 ◽

2007 ◽

Vol 101 (7) ◽

pp. 073709 ◽

Cited By ~ 12

Author(s):

V. Nam Do ◽

P. Dollfus

Keyword(s):

Metal Oxide ◽

Leakage Current ◽

Field Effect ◽

Oxide Semiconductor ◽

Double Gate ◽

Gate Leakage Current ◽

Gate Leakage