Self-aligned inversion-channel In0.2Ga0.8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3(Gd2O3) as the gate dielectric
2011 ◽
Vol 29
(3)
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pp. 03C122
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2008 ◽
Vol 26
(3)
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pp. 1187
2001 ◽
Vol 40
(Part 2, No. 11B)
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pp. L1201-L1203
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2008 ◽
Vol 29
(9)
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pp. 977-980
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