Crystal Orientation and Nitrogen Effects on the Carrier Mobility of p-Type Metal Oxide Semiconductor Field Effect Transistor with Ultra Thin Gate Dielectrics

Oxide Semiconductor ◽

Effect Transistor ◽

P Type

Carrier Mobility in Metal-Oxide-Semiconductor Field Effect Transistor with Atomic-Layer-Deposited Si-Nitride Gate Dielectrics

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.l903 ◽

2005 ◽

Vol 44 (No. 28) ◽

pp. L903-L905 ◽

Cited By ~ 2

Author(s):

Anri Nakajima ◽

Hiroyuki Ishii ◽

Shin Yokoyama

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Carrier Mobility ◽

Field Effect Transistor ◽

Gate Dielectrics ◽

Atomic Layer ◽

Oxide Semiconductor ◽

High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics

Applied Physics Letters ◽

10.1063/1.2956393 ◽

2008 ◽

Vol 93 (3) ◽

pp. 033516 ◽

Cited By ~ 109

Author(s):

T. D. Lin ◽

H. C. Chiu ◽

P. Chang ◽

L. T. Tung ◽

C. P. Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Gate Dielectrics ◽

Oxide Semiconductor ◽

Inversion Channel ◽

Novel Si/SiC Heterojunction Lateral Double-diffused Metal Oxide Semiconductor Field Effect Transistor with P-type Buried Layer Breaking Silicon Limit

Chinese Physics B ◽

10.1088/1674-1056/abcf45 ◽

2020 ◽

Author(s):

Baoxing Duan ◽

Xin Huang ◽

Haitao Song ◽

Yandong Wang ◽

Yintang Yang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Buried Layer ◽

P Type

35 nm Metal Gate p-type Metal Oxide Semiconductor Field-Effect Transistor with PtSi Schottky Source/Drain on Separation by Implanted Oxygen Substrate

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.l629 ◽

1999 ◽

Vol 38 (Part 2, No. 6A/B) ◽

pp. L629-L631 ◽

Cited By ~ 16

Author(s):

Wataru Saitoh ◽

Shigeharu Yamagami ◽

Atsushi Itoh ◽

Masahiro Asada

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Metal Gate ◽

Effect Transistor ◽

P Type

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

Effective mobility characteristics of platinum-silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistor

10.1116/1.3457936 ◽

2010 ◽

Vol 28 (4) ◽

pp. 799-801 ◽

Cited By ~ 2

Author(s):

Moongyu Jang ◽

Myungsim Jun ◽

Taehyoung Zyung

Keyword(s):

Metal Oxide ◽

Schottky Barrier ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Effective Mobility ◽

Effect Transistor ◽

Barrier Metal ◽

P Type

New insights in the passivation of high-k/InP through interface characterization and metal–oxide–semiconductor field effect transistor demonstration: Impact of crystal orientation

Journal of Applied Physics ◽

10.1063/1.4772944 ◽

2013 ◽

Vol 113 (1) ◽

pp. 013711 ◽

Cited By ~ 13

Author(s):

Min Xu ◽

Jiangjiang J. Gu ◽

Chen Wang ◽

D. M. Zhernokletov ◽

R. M. Wallace ◽

...

Keyword(s):

Metal Oxide ◽

Crystal Orientation ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Interface Characterization ◽

High K ◽

Strain Engineering of Nanoscale Si P-Type Metal-Oxide-Semiconductor Field-Effect Transistor Devices with SiGe Alloy Integrated with Contact-Etch-Stop Layer Stressors

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2012.6278 ◽

2012 ◽

Vol 12 (7) ◽

pp. 5402-5406 ◽

Cited By ~ 3

Author(s):

Chang-Chun Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Strain Engineering ◽

Oxide Semiconductor ◽

Etch Stop ◽

Etch Stop Layer ◽

Effect Transistor ◽

P Type

N and P metal oxide semiconductor field effect transistor characteristics of hafnium-doped SiO2 gate dielectrics

Journal of Electronic Materials ◽

10.1007/s11664-001-0165-1 ◽

2001 ◽

Vol 30 (12) ◽

pp. 1499-1505 ◽

Cited By ~ 4

Author(s):

Veena Misra ◽

Manoj Kulkarni ◽

Huicai Zhong

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectrics ◽

Oxide Semiconductor ◽

Degradation of low frequency noise in SiGe- and SiGeC-surface channel p-type metal-oxide-semiconductor field effect transistor due to consuming the Si cap

Applied Physics Letters ◽

10.1063/1.2819071 ◽

2007 ◽

Vol 91 (23) ◽

pp. 233505 ◽

Cited By ~ 4

Author(s):

R. Yang ◽

Y. Z. Xiong ◽

W. Y. Loh ◽

J. D. Ye ◽

M. B. Yu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Low Frequency ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Low Frequency Noise ◽

Effect Transistor ◽

P Type

An asymmetric Si/Si1−xGex channel vertical p-type metal-oxide-semiconductor field-effect transistor

Solid-State Electronics ◽

10.1016/s0038-1101(01)00013-2 ◽

2001 ◽

Vol 45 (2) ◽

pp. 281-285 ◽

Cited By ~ 2

Author(s):

Xiangdong Chen ◽

Qiqing Ouyang ◽

Sankaran Kartik Jayanarayanan ◽

Freek E. Prins ◽

Sanjay Banerjee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

P Type