Characterization of Strain for High-Performance Metal–Oxide–Semiconductor Field-Effect-Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2538 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2538-2543 ◽

Author(s):

Daisuke Kosemura ◽

Yasuto Kakemura ◽

Tetsuya Yoshida ◽

Atsushi Ogura ◽

Masayuki Kohno ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3∕Ga2O3(Gd2O3) as gate dielectrics

Applied Physics Letters ◽

10.1063/1.2956393 ◽

2008 ◽

Vol 93 (3) ◽

pp. 033516 ◽

Author(s):

T. D. Lin ◽

H. C. Chiu ◽

P. Chang ◽

L. T. Tung ◽

C. P. Chen ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Gate Dielectrics ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel ◽

Effect Transistor

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Direct measurement and characterization of n+ superhalo implants in a 120 nm gate-length Si metal–oxide–semiconductor field-effect transistor using cross-sectional scanning capacitance microscopy

Applied Physics Letters ◽

10.1063/1.1522819 ◽

2002 ◽

Vol 81 (21) ◽

pp. 3993-3995 ◽

Author(s):

P. A. Rosenthal ◽

Y. Taur ◽

E. T. Yu

Keyword(s):

Metal Oxide ◽

Direct Measurement ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Length ◽

Cross Sectional ◽

Effect Transistor

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Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor

Journal of Applied Physics ◽

10.1063/1.2335967 ◽

2006 ◽

Vol 100 (4) ◽

pp. 044515 ◽

Author(s):

Siddharth Potbhare ◽

Neil Goldsman ◽

Gary Pennington ◽

Aivars Lelis ◽

James M. McGarrity

Keyword(s):

Silicon Carbide ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Experimental Characterization ◽

Effect Transistor

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Characterization of high-sensitivity metal oxide semiconductor field effect transistor dosimeters system and LiF:Mg,Cu,P thermoluminescence dosimeters for use in diagnostic radiology

Applied Radiation and Isotopes ◽

10.1016/s0969-8043(02)00235-x ◽

2002 ◽

Vol 57 (6) ◽

pp. 883-891 ◽

Author(s):

S.L Dong ◽

T.C Chu ◽

G.Y Lan ◽

T.H Wu ◽

Y.C Lin ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

High Sensitivity ◽

Metal Oxide Semiconductor ◽

Diagnostic Radiology ◽

Oxide Semiconductor ◽

Effect Transistor

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Fabrication and characterization of vertical-type double-gate metal-oxide-semiconductor field-effect transistor with ultrathin Si channel and self-aligned source and drain

Applied Physics Letters ◽

10.1063/1.2173715 ◽

2006 ◽

Vol 88 (7) ◽

pp. 072103 ◽

Author(s):

Meishoku Masahara ◽

Yongxun Liu ◽

Kazuhiko Endo ◽

Takashi Matsukawa ◽

Kunihiro Sakamoto ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

Fabrication And Characterization

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Photo-pseudo-metal–oxide–semiconductor field effect transistor for characterization of surface recombination in silicon on insulator materials

Journal of Applied Physics ◽

10.1063/1.4804064 ◽

2013 ◽

Vol 113 (18) ◽

pp. 183702 ◽

Author(s):

M. Daanoune ◽

A. Diab ◽

S. Sirajeddine ◽

A. Kaminski-Cachopo ◽

I. Ionica ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Surface Recombination ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Effect Transistor

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A high performance In0.53Ga0.47As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer

Applied Physics Letters ◽

10.1063/1.3068752 ◽

2009 ◽

Vol 94 (1) ◽

pp. 013511 ◽

Author(s):

Feng Zhu ◽

Han Zhao ◽

I. Ok ◽

H. S. Kim ◽

J. Yum ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Interface Passivation ◽

Silicon Interface

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Fabrication and Characterization of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET)-based Micro pH Sensor

2020 Medical Technologies Congress (TIPTEKNO) ◽

10.1109/tiptekno50054.2020.9299291 ◽

2020 ◽

Author(s):

Fikri Seven ◽

ve Mustafa Sen

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Ph Sensor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Fabrication And Characterization

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Experimental characterization of a metal-oxide-semiconductor field-effect transistor-based Coulter counter

Journal of Applied Physics ◽

10.1063/1.2931026 ◽

2008 ◽

Vol 103 (10) ◽

pp. 104701 ◽

Author(s):

Manoj Sridhar ◽

Dongyan Xu ◽

Yuejun Kang ◽

Anthony B. Hmelo ◽

Leonard C. Feldman ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Coulter Counter ◽

Oxide Semiconductor ◽

Experimental Characterization ◽

Effect Transistor

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Characterization of metal—oxide—semiconductor field-effect transistor (MOSFET) for polypyrrole and poly (N-alkylpyrrole)s prepared by electrochemical synthesis

Synthetic Metals ◽

10.1016/s0379-6779(96)03773-3 ◽

1996 ◽

Vol 82 (3) ◽

pp. 167-173 ◽

Author(s):

Chin-Tsou Kou ◽

Tzong-Rong Liou

Keyword(s):

Metal Oxide ◽

Electrochemical Synthesis ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor

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