Subthreshold slope and transconductance degradation model in cycled hot electron injection programed/hot hole erased silicon-oxide-nitride-oxide-silicon memories

2008 ◽  
Vol 104 (5) ◽  
pp. 054502 ◽  
Author(s):  
Ramiz Daniel ◽  
Arie Ruzin ◽  
Yakov Roizin ◽  
Yossi Shaham-Diamand
Keyword(s):  
Silicon Oxide ◽  
Electron Injection ◽  
Hot Electron ◽  
Subthreshold Slope ◽  
Degradation Model ◽  
Hot Electron Injection ◽  
Nitride Oxide

Channel width dependence of hot electron injection program/hot hole erase cycling behavior in silicon-oxide-nitride-oxide-silicon (SONOS) memories

2008 ◽  
Vol 52 (6) ◽  
pp. 844-848 ◽  
Author(s):  
Seung-Hwan Seo ◽  
Se-Woon Kim ◽  
Jang-Uk Lee ◽  
Gu-Cheol Kang ◽  
Kang-Seob Roh ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Electron Injection ◽  
Channel Width ◽  
Hot Electron ◽  
Hot Electron Injection ◽  
Nitride Oxide ◽  
Cycling Behavior

Characterization of channel hot electron injection by the subthreshold slope of NROM/sup TM/ device

2001 ◽  
Vol 22 (11) ◽  
pp. 556-558 ◽  
Author(s):  
E. Lusky ◽  
Y. Shacham-Diamand ◽  
I. Bloom ◽  
B. Eitan
Keyword(s):  
Electron Injection ◽  
Hot Electron ◽  
Subthreshold Slope ◽  
Hot Electron Injection

scholarly journals Consideration of contribution of hot-electron injection to the resistive switching of sputter-deposited silicon oxide film

2021 ◽  
Vol 24 (3) ◽  
pp. 1367
Author(s):  
Yasuhisa Omura
Keyword(s):  
Oxide Film ◽  
Resistive Switching ◽  
Silicon Oxide ◽  
Electron Injection ◽  
Hot Electron ◽  
Dissipation Energy ◽  
Silicon Oxide Film ◽  
Hot Electron Injection ◽  
Sputter Deposited ◽  
The Impact

<p>This paper considers the contribution of hot electrons to the resistive switching of sputter-deposited silicon oxide films based on experiments together with semi-2D Monte Carlo simulations. Using various device stack structures, this paper examines the impact of hot-electron injection on resistive switching, where conduction-band offset and fermi-level difference are utilized. Support is found for the predictions that hot-electron injection reduces the switching voltage and this should reduce the dissipation energy of switching. It is predicted that two-layer metal stacks can significantly reduce the number of oxygen vacancies in the sputter-deposited silicon oxide film after the reset process. It is also demonstrated that, in unipolar switching, the number of E’ or E” centers of the sputter-deposited silicon oxide film is relatively large.</p>

Rectification in Chiral Carbon Nanotubes with Hot Electron Injection

2020 ◽  
Vol 131 (3) ◽  
pp. 456-459
Author(s):  
S. S. Abukari ◽  
R. Musah ◽  
M. Amekpewu ◽  
S. Y. Mensah ◽  
N. G. Mensah ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Electron Injection ◽  
Hot Electron ◽  
Hot Electron Injection ◽  
Chiral Carbon

scholarly journals Simulation of GaAs submicron FET with hot-electron injection structure

1983 ◽  
Vol 19 (17) ◽  
pp. 697 ◽  
Author(s):  
K. Tomizawa ◽  
Y. Awano ◽  
N. Hashizume ◽  
M. Kawashima
Keyword(s):  
Electron Injection ◽  
Hot Electron ◽  
Hot Electron Injection
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