Consideration of contribution of hot-electron injection to the resistive switching of sputter-deposited silicon oxide film

<p>This paper considers the contribution of hot electrons to the resistive switching of sputter-deposited silicon oxide films based on experiments together with semi-2D Monte Carlo simulations. Using various device stack structures, this paper examines the impact of hot-electron injection on resistive switching, where conduction-band offset and fermi-level difference are utilized. Support is found for the predictions that hot-electron injection reduces the switching voltage and this should reduce the dissipation energy of switching. It is predicted that two-layer metal stacks can significantly reduce the number of oxygen vacancies in the sputter-deposited silicon oxide film after the reset process. It is also demonstrated that, in unipolar switching, the number of E’ or E” centers of the sputter-deposited silicon oxide film is relatively large.</p>

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Possible Equivalent Circuit Model and Physical Structures of Sputter-Deposited Silicon Oxide Film Showing Resistive Switching

ECS Journal of Solid State Science and Technology ◽

10.1149/2162-8777/ac4217 ◽

2021 ◽

Author(s):

Yasuhisa Omura

Keyword(s):

Oxide Film ◽

Equivalent Circuit ◽

Resistive Switching ◽

Silicon Oxide ◽

Equivalent Circuit Model ◽

Frequency Dispersion ◽

Circuit Model ◽

Conductive Filament ◽

Silicon Oxide Film ◽

Sputter Deposited

Abstract Based on the results of experiments on the resistive switching behaviors of sputter-deposited silicon oxide films, this paper proposes a possible equivalent circuit model to characterize the switching behavior. It is revealed that frequency dispersion of the conductance component and capacitance component in the equivalent circuit model dominate the physical interpretation of the frequency-dependence of the components. The validity of the model and its physical interpretation are examined based on a theoretical model of the dielectric function of the conductive filament region. The polarizability of the conductive filament region suggests that the capacitance component of the conductive filament is insensitive to frequency in the low frequency range, whereas the conductance component of the conductive filament is proportional to frequency in the low frequency range. These theoretical results match experimental findings, and it is revealed that the equivalent circuit models and the frequency dispersion models for the capacitance and conductance component of the silicon oxide film are acceptable. In addition, this paper reveals the importance of the sub-oxide region and the Si precipitate region in determining the resistive switching behaviors of sputter-deposited silicon oxide film.

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Channel width dependence of hot electron injection program/hot hole erase cycling behavior in silicon-oxide-nitride-oxide-silicon (SONOS) memories

Solid-State Electronics ◽

10.1016/j.sse.2008.02.001 ◽

2008 ◽

Vol 52 (6) ◽

pp. 844-848 ◽

Cited By ~ 2

Author(s):

Seung-Hwan Seo ◽

Se-Woon Kim ◽

Jang-Uk Lee ◽

Gu-Cheol Kang ◽

Kang-Seob Roh ◽

...

Keyword(s):

Silicon Oxide ◽

Electron Injection ◽

Channel Width ◽

Hot Electron ◽

Hot Electron Injection ◽

Nitride Oxide ◽

Cycling Behavior

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Generation of interface states at the silicon/oxide interface due to hot‐electron injection

Journal of Applied Physics ◽

10.1063/1.355004 ◽

1993 ◽

Vol 74 (12) ◽

pp. 7364-7368 ◽

Cited By ~ 34

Author(s):

H. Wong ◽

Y. C. Cheng

Keyword(s):

Silicon Oxide ◽

Electron Injection ◽

Interface States ◽

Hot Electron ◽

Oxide Interface ◽

Hot Electron Injection

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Impact Ionization and Hot-Electron Injection Derived Consistently from Boltzmann Transport

VLSI Design ◽

10.1155/1998/73698 ◽

1998 ◽

Vol 8 (1-4) ◽

pp. 454-461 ◽

Cited By ~ 14

Author(s):

Paul Hasler ◽

Andreas G. Andreou ◽

Chris Diorio ◽

Bradley A. Minch ◽

Carver A. Mead

Keyword(s):

Distribution Function ◽

Impact Ionization ◽

Electron Distribution Function ◽

Electron Injection ◽

Quantitative Model ◽

Depletion Region ◽

Hot Electron ◽

Boltzmann Transport ◽

Hot Electron Injection ◽

The Impact

We develop a quantitative model of the impact-ionizationand hot-electron–injection processes in MOS devices from first principles. We begin by modeling hot-electron transport in the drain-to-channel depletion region using the spatially varying Boltzmann transport equation, and we analytically find a self consistent distribution function in a two step process. From the electron distribution function, we calculate the probabilities of impact ionization and hot-electron injection as functions of channel current, drain voltage, and floating-gate voltage. We compare our analytical model results to measurements in long-channel devices. The model simultaneously fits both the hot-electron- injection and impact-ionization data. These analytical results yield an energydependent impact-ionization collision rate that is consistent with numerically calculated collision rates reported in the literature.

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