Epitaxial growth of aluminum nitride on AlGaN by reactive sputtering at low temperature

2008 ◽  
Vol 93 (5) ◽  
pp. 052905 ◽  
Author(s):  
C. Duquenne ◽  
M. A. Djouadi ◽  
P. Y. Tessier ◽  
P. Y. Jouan ◽  
M. P. Besland ◽  
...  
Keyword(s):  
Low Temperature ◽  
Aluminum Nitride ◽  
Epitaxial Growth ◽  
Reactive Sputtering

scholarly journals Low Temperature Reactive Sputtering of Thin Aluminum Nitride Films on Metallic Nanocomposites

PLoS ONE ◽  
2015 ◽  
Vol 10 (7) ◽  
pp. e0133479 ◽  
Author(s):  
Khaled Sayed Elbadawi Ramadan ◽  
Stephane Evoy
Keyword(s):  
Low Temperature ◽  
Aluminum Nitride ◽  
Reactive Sputtering ◽  
Thin Aluminum

scholarly journals Effect of Aluminum Nitride Buffer Layer Deposited by Molecular Beam Epitaxy on the Growth of Aluminum Nitride Thin Films Deposited by DC Magnetron Sputtering Technique

2021 ◽  
Author(s):  
B. Riah ◽  
Julien Camus ◽  
Abdelhak Ayad ◽  
Mohammad Rammal ◽  
Raouia Zernadji ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Aluminum Nitride ◽  
Magnetron Sputtering ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Dc Magnetron Sputtering ◽  
Aln Buffer

This paper reports the effect of silicon substrate orientation and aluminum nitride buffer layer deposited by molecular beam epitaxy on the growth of aluminum nitride thin films deposited by DC magnetron sputtering technique at low temperature. The structural analysis has revealed a strong (0001) fiber texture for both substrates Si (100) and (111) and a hetero-epitaxial growth on few nanometers AlN buffer layer grown by MBE on Si (111) substrate. SEM images and XRD characterization have shown an enhancement in AlN crystallinity thanks to AlN (MBE) buffer layer. Raman spectroscopy indicated that the AlN film was relaxed when it deposited on Si (111), in compression on Si (100) and under tension on AlN buffer layer grown by MBE/Si (111) substrates, respectively. The interface between Si (111) and AlN grown by MBE is abrupt and well defined; contrary to the interface between AlN deposited using PVD and AlN grown by MBE. Nevertheless, AlN hetero-epitaxial growth was obtained at low temperature (<250°C).

Epitaxial growth of aluminum nitride on Si(111) by reactive sputtering

1991 ◽  
Vol 59 (17) ◽  
pp. 2097-2099 ◽  
Author(s):  
W. J. Meng ◽  
J. Heremans ◽  
Y. T. Cheng
Keyword(s):  
Aluminum Nitride ◽  
Epitaxial Growth ◽  
Reactive Sputtering

Microscopic investigations of aluminum nitride thin films grown by low-temperature reactive sputtering

2005 ◽  
Vol 483 (1-2) ◽  
pp. 16-20 ◽  
Author(s):  
Q.X. Guo ◽  
M. Yoshitugu ◽  
T. Tanaka ◽  
M. Nishio ◽  
H. Ogawa
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Aluminum Nitride ◽  
Reactive Sputtering ◽  
Microscopic Investigations

Epitaxial growth of Co3O4 films by low temperature, low pressure chemical vapour deposition

2001 ◽  
Vol 231 (1-2) ◽  
pp. 242-247 ◽  
Author(s):  
K. Shalini ◽  
Anil U. Mane ◽  
S.A. Shivashankar ◽  
M. Rajeswari ◽  
S. Choopun
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Pressure Chemical
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