Characterization of copper selenide thin film hole-injection layers deposited at room temperature for use with p-type organic semiconductors

2008 ◽  
Vol 104 (11) ◽  
pp. 113723 ◽  
Author(s):  
Hidenori Hiramatsu ◽  
Ikue Koizumi ◽  
Ki-Beom Kim ◽  
Hiroshi Yanagi ◽  
Toshio Kamiya ◽  
...  
Keyword(s):  
Thin Film ◽  
Organic Semiconductors ◽  
Room Temperature ◽  
Copper Selenide ◽  
Hole Injection ◽  
P Type ◽  
Selenide Thin Film

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

Electrical characterization of Cu-doped CdS p-type thin film transistors

2021 ◽  
Author(s):  
D. Berman-Mendoza ◽  
O. I. Diaz-Grijalva ◽  
R. López-Delgado ◽  
A. Ramos-Carrazco ◽  
M. E. Alvarez-Ramos ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Electrical Characterization ◽  
P Type

Highly sensitive and selective room-temperature NO2 gas-sensing characteristics of SnOX-based p-type thin-film transistor

2019 ◽  
Vol 288 ◽  
pp. 625-633 ◽  
Author(s):  
Hwan-Seok Jeong ◽  
Min-Jae Park ◽  
Soo-Hun Kwon ◽  
Hyo-Jun Joo ◽  
Hyuck-In Kwon
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Gas Sensing ◽  
Thin Film Transistor ◽  
Highly Sensitive ◽  
P Type ◽  
Sensing Characteristics

scholarly journals Tailoring and Characterization of Porous hierarchical Nanostructured p Type Thin Film of Cu-Al-Oxide for the Detection of Pollutant Gases

2014 ◽  
Vol 87 ◽  
pp. 252-255 ◽  
Author(s):  
R. Kumar ◽  
C. Baratto ◽  
G. Faglia ◽  
G. Sberveglieri ◽  
K. Vojisavljevic ◽  
...  
Keyword(s):  
Thin Film ◽  
P Type ◽  
Pollutant Gases ◽  
Al Oxide

Ternary lead-chalcogenide room-temperature mid-wave infrared detectors grown by spray-deposition

MRS Advances ◽  
2018 ◽  
Vol 3 (5) ◽  
pp. 291-297 ◽  
Author(s):  
Hussain Abouelkhair ◽  
Pedro N. Figueiredo ◽  
Seth R. Calhoun ◽  
Chris J. Fredricksen ◽  
Isaiah O. Oladeji ◽  
...  
Keyword(s):  
Room Temperature ◽  
Heterogeneous Reaction ◽  
Spray Deposition ◽  
Complexing Agents ◽  
X Ray Diffraction ◽  
Lead Chalcogenide ◽  
Lead Chalcogenides ◽  
Diffraction Peaks ◽  
P Type

ABSTRACTTernary lead chalcogenides, such as PbSxSe1-x, offer the possibility of room-temperature infrared detection with engineered cut-off wavelengths within the important 3-5 micron mid-wave infrared (MWIR) wavelength range. We present growth and characterization of aqueous spray-deposited thin films of PbSSe. Complexing agents in the aqueous medium suppress unwanted homogeneous reactions so that growth occurs only by the heterogeneous reaction on the hydrophilic substrate. The strongly-adherent films are smooth with a mirror-like finish. The films comprise densely packed grains with tens of nm dimensions and a total film thickness of ∼400-500 nm. Measured optical constants reveal absorption out to at least 4.5 μm wavelength and a ∼0.3 eV bandgap intermediate between those of PbS and PbSe. The semiconducting films are p-type with resistivity ∼1 and 85 Ohm-cm at 300 and 80 K, respectively. Sharp x-ray diffraction peaks identify the films as Clausthalite-Galena solid-state solution with a lattice constant that indicates an even mixture of PbS and PbSe. The photoconductive response is observed at both nitrogen and room temperature up to at least 2 kHz chopping frequency.

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