Ternary lead-chalcogenide room-temperature mid-wave infrared detectors grown by spray-deposition

MRS Advances ◽  
2018 ◽  
Vol 3 (5) ◽  
pp. 291-297 ◽  
Author(s):  
Hussain Abouelkhair ◽  
Pedro N. Figueiredo ◽  
Seth R. Calhoun ◽  
Chris J. Fredricksen ◽  
Isaiah O. Oladeji ◽  
...  
Keyword(s):  
Room Temperature ◽  
Heterogeneous Reaction ◽  
Spray Deposition ◽  
Complexing Agents ◽  
X Ray Diffraction ◽  
Lead Chalcogenide ◽  
Lead Chalcogenides ◽  
Diffraction Peaks ◽  
P Type

ABSTRACTTernary lead chalcogenides, such as PbSxSe1-x, offer the possibility of room-temperature infrared detection with engineered cut-off wavelengths within the important 3-5 micron mid-wave infrared (MWIR) wavelength range. We present growth and characterization of aqueous spray-deposited thin films of PbSSe. Complexing agents in the aqueous medium suppress unwanted homogeneous reactions so that growth occurs only by the heterogeneous reaction on the hydrophilic substrate. The strongly-adherent films are smooth with a mirror-like finish. The films comprise densely packed grains with tens of nm dimensions and a total film thickness of ∼400-500 nm. Measured optical constants reveal absorption out to at least 4.5 μm wavelength and a ∼0.3 eV bandgap intermediate between those of PbS and PbSe. The semiconducting films are p-type with resistivity ∼1 and 85 Ohm-cm at 300 and 80 K, respectively. Sharp x-ray diffraction peaks identify the films as Clausthalite-Galena solid-state solution with a lattice constant that indicates an even mixture of PbS and PbSe. The photoconductive response is observed at both nitrogen and room temperature up to at least 2 kHz chopping frequency.

Synthesis and Characterization of Super Paramagnetic Iron Oxide Nanoparticles

2020 ◽  
Vol 10 (2) ◽  
pp. 123-126
Author(s):  
Debasish Aich ◽  
Pijus Kanti Samanta ◽  
Satyajit Saha ◽  
Tapanendu Kamilya
Keyword(s):  
Iron Oxide ◽  
Room Temperature ◽  
Synthesis And Characterization ◽  
Oxide Nanoparticles ◽  
Fe2o3 Nanoparticles ◽  
X Ray Diffraction ◽  
X Ray ◽  
Paramagnetic Behavior ◽  
Diffraction Peaks

Background: Iron oxide (γ-Fe2O3) nanoparticles have been prepared by a simplified coprecipitation method. Methods: X-ray diffraction peaks of the prepared nanoparticles match well with the characteristic peaks of crystalline g-Fe2O3 as per JCPDS data (JCPDS Card No. 39-1346) and absorption peak at 369 nm along with band gap 2.10 eV suggesting the formation of (γ-Fe2O3) nanoparticles. Results: The γ-Fe2O3 nanoparticles are spherical in nature with a diameter around ~10 nm. Conclusion: The crystalline g-Fe2O3 nanoparticles exhibit excellent super-paramagnetic behavior not only at room temperature (300K) but also at a temperature as low as 100K.

Fabrication and Characterization of CIASSe Thin Film Photovoltaic Absorbers Using CIAS Nanocrystals

2012 ◽  
Vol 512-515 ◽  
pp. 39-42
Author(s):  
Bei Zhu ◽  
Cheng Jun Zhu ◽  
Shan Chang ◽  
Yong Wen Zhang ◽  
Chao Zheng Wang
Keyword(s):  
Thin Film ◽  
Hall Effect Measurement ◽  
Optical Absorption Coefficient ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
One Step ◽  
Diffraction Peaks ◽  
P Type ◽  
Selenization Temperature

Cu(In0.8Al0.2)(SSe)2 (CIASSe) absorber layers of thin film solar cell were prepared by selenization of Cu(In0.8Al0.2)S2(CIAS) nanocrystals. The CIAS nanocrystals were synthesized by a new solution-based technique and successfully deposited on Mo-coated glass substrates in a one-step process. The phase structure, optical and electrical properties of CIASSe thin films were characterized by power X-ray diffraction (XRD), ultraviolet-visible (UV-Vis) spectrophotometer and the Hall Effect Measurement system. The results showed that single-phase CIASSe solid solution was successfully obtained for a selenization temperature of above 400oC. And the diffraction peaks shifted to the lower angle with an increase in selenization time and selenization temperature. The films selenized at 500oC were found to be p-type and the resistivity was only 0.9484×10-4Ω cm. The optical band gap of the films is 1.508eV and the optical absorption coefficient is over 104cm-1.

Growth And Characterization Of Amorphous Ain Thin Films By Reactive Magnetron Sputtering At Low Temperature

1998 ◽  
Vol 535 ◽  
Author(s):  
K. Gurumurugan ◽  
Hong Chen ◽  
G. R. Harp
Keyword(s):  
Magnetron Sputtering ◽  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Liquid Nitrogen Temperature ◽  
Reactive Magnetron Sputtering ◽  
Composition Analysis ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
Diffraction Peaks

AbstractWe present the first report of the preparation and characterization of α-AIN films using reactive magnetron sputtering at cryogenic temperature. By comparison, analogous films grown at room temperature were polycrystalline. The films were characterized using X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Rutherford Backscattering Spectrometry (RBS), Infrared (IR) Spectroscopy and optical transmission. XRD studies on films grown at room temperature showed diffraction peaks corresponding to (100), (101), (102) and (210) planes. In contrast, no peaks were observed for AIN films formed at liquid nitrogen temperature confirming the amorphous nature of the films. Composition analysis using RBS showed the presence of Al and N in ˜1:1 stoichiometry. The films were highly transparent and the computed bandgaps of αand c-AIN films were 5.90 and 5.89 eV respectively. We also consider the possibilities of wet etching the AIN films in diluted KOH solution and the results are discussed.

scholarly journals Synthesis and Characterization of Lithium-Ion Conductive LATP-LaPO4 Composites Using La2O3 Nano-Powder

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3502
Author(s):  
Fangzhou Song ◽  
Masayoshi Uematsu ◽  
Takeshi Yabutsuka ◽  
Takeshi Yao ◽  
Shigeomi Takai
Keyword(s):  
Room Temperature ◽  
Conduction Mechanism ◽  
Lithium Ion ◽  
X Ray Diffraction ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
X Ray ◽  
Nano Powder ◽  
Powder Addition

LATP-based composite electrolytes were prepared by sintering the mixtures of LATP precursor and La2O3 nano-powder. Powder X-ray diffraction and scanning electron microscopy suggest that La2O3 can react with LATP during sintering to form fine LaPO4 particles that are dispersed in the LATP matrix. The room temperature conductivity initially increases with La2O3 nano-powder addition showing the maximum of 0.69 mS∙cm−1 at 6 wt.%, above which, conductivity decreases with the introduction of La2O3. The activation energy of conductivity is not largely varied with the La2O3 content, suggesting that the conduction mechanism is essentially preserved despite LaPO4 dispersion. In comparison with the previously reported LATP-LLTO system, although some unidentified impurity slightly reduces the conductivity maximum, the fine dispersion of LaPO4 particles can be achieved in the LATP–La2O3 system.

scholarly journals MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics

2000 ◽  
Vol 5 (S1) ◽  
pp. 412-424
Author(s):  
Jung Han ◽  
Jeffrey J. Figiel ◽  
Gary A. Petersen ◽  
Samuel M. Myers ◽  
Mary H. Crawford ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Optoelectronic Devices ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Energy ◽  
Movpe Growth ◽  
Pl Emission

We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

scholarly journals Metal-Rich Metallaboranes: Synthesis, Structures and Bonding of Bi- and Trimetallic Open-Faced Cobaltaboranes

Inorganics ◽  
2021 ◽  
Vol 9 (4) ◽  
pp. 28
Author(s):  
Kriti Pathak ◽  
Chandan Nandi ◽  
Jean-François Halet ◽  
Sundargopal Ghosh
Keyword(s):  
Electronic Structures ◽  
Density Functional ◽  
Room Temperature ◽  
Electron Pair ◽  
X Ray Diffraction ◽  
Functional Theory ◽  
X Ray ◽  
Cluster 2 ◽  
Cobalt Center

Synthesis, isolation, and structural characterization of unique metal rich diamagnetic cobaltaborane clusters are reported. They were obtained from reactions of monoborane as well as modified borohydride reagents with cobalt sources. For example, the reaction of [Cp*CoCl]2 with [LiBH4·THF] and subsequent photolysis with excess [BH3·THF] (THF = tetrahydrofuran) at room temperature afforded the 11-vertex tricobaltaborane nido-[(Cp*Co)3B8H10] (1, Cp* = η5-C5Me5). The reaction of Li[BH2S3] with the dicobaltaoctaborane(12) [(Cp*Co)2B6H10] yielded the 10-vertex nido-2,4-[(Cp*Co)2B8H12] cluster (2), extending the library of dicobaltadecaborane(14) analogues. Although cluster 1 adopts a classical 11-vertex-nido-geometry with one cobalt center and four boron atoms forming the open pentagonal face, it disobeys the Polyhedral Skeletal Electron Pair Theory (PSEPT). Compound 2 adopts a perfectly symmetrical 10-vertex-nido framework with a plane of symmetry bisecting the basal boron plane resulting in two {CoB3} units bridged at the base by two boron atoms and possesses the expected electron count. Both compounds were characterized in solution by multinuclear NMR and IR spectroscopies and by mass spectrometry. Single-crystal X-ray diffraction analyses confirmed the structures of the compounds. Additionally, density functional theory (DFT) calculations were performed in order to study and interpret the nature of bonding and electronic structures of these complexes.

Synthesis and Characterization of ZIF-8 Mixed Matrix Membranes

2014 ◽  
Vol 625 ◽  
pp. 661-664
Author(s):  
Chen Chuang Lok ◽  
Yin Fong Yeong
Keyword(s):  
Room Temperature ◽  
Synthesis Method ◽  
Mixed Matrix Membranes ◽  
Inorganic Filler ◽  
X Ray Diffraction ◽  
Mixed Matrix ◽  
Temperature Synthesis ◽  
X Ray ◽  
Matrix Membranes

In the present work, ZIF-8/6FDA-durene mixed matrix membranes (MMMs) were synthesized and characterized. ZIF-8 nanocrystals, which were used as the inorganic filler, were synthesized using rapid room-temperature synthesis method whereas 6FDA-durene polyimide was synthesized by polycondensation method followed by chemical imidization. Pure and 6FDA-durene membranes loaded with 5 wt%, 10 wt% and 15 wt% of ZIF-8 were fabricated. The structural properties and morphology of the resultant membranes were characterized by using X-ray Diffraction (XRD) and Field emission scanning electron microscope (FESEM) . The EDX images showed that ZIF-8 particles agglomerated in the polymer matrix. However, no phase separation was observed for all resultant MMMs.

Growth mechanism and characterization of ZnO nano-tubes synthesized using the hydrothermal-etching method

2009 ◽  
Vol 63 (6) ◽  
Author(s):  
Yan Li ◽  
Chuan-Sheng Liu ◽  
Yun-Ling Zou
Keyword(s):  
Room Temperature ◽  
Morphological Analysis ◽  
Diffraction Field ◽  
X Ray Diffraction ◽  
X Ray ◽  
Room Temperature Photoluminescence ◽  
Etching Method ◽  
Nano Rods ◽  
Two Stages

AbstractZnO nano-tubes (ZNTs) have been successfully synthesized via a simple hydrothermal-etching method, and characterized by X-ray diffraction, field emission scanning electron microscopy and room temperature photoluminescence measurement. The as-synthesized ZNTs have a diameter of 500 nm, wall thickness of 20–30 nm, and length of 5 µm. Intensity of the plane (0002) diffraction peak, compared with that of plane (10$$ \bar 1 $$0) of ZNTs, is obviously lower than that of ZnO nano-rods. This phenomenon can be caused by the smaller cross section of plane (0002) of the nano-tubes compared with that of other morphologies. On basis of the morphological analysis, the formation process of nano-tubes can be proposed in two stages: hydrothermal growth and reaction etching process.

AlxGa1-xN-Based Materials and Heterostructures

1996 ◽  
Vol 449 ◽  
Author(s):  
P. Kung ◽  
A. Saxler ◽  
D. Walker ◽  
X. Zhang ◽  
R. Lavado ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Bragg Reflectors ◽  
X Ray Diffraction ◽  
Chemical Vapor Deposition Growth ◽  
X Ray ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Dimensional Electron Gas ◽  
P Type

ABSTRACTWe present the metalorganic chemical vapor deposition growth, n-type and p-type doping and characterization of AlxGa1-xN alloys on sapphire substrates. We report the fabrication of Bragg reflectors and the demonstration of two dimensional electron gas structures using AlxGa1-xN high quality films. We report the structural characterization of the AlxGa1-xN / GaN multilayer structures and superlattices through X-ray diffraction and transmission electron microscopy. A density of screw and mixed threading dislocations as low as 107 cm-2 was estimated in AlxGa1-xN / GaN structures. The realization of AlxGa1-xN based UV photodetectors with tailored cut-off wavelengths from 365 to 200 nm are presented.

X-Ray Diffraction Analysis on Crystallite Development of Nanostructured Aluminium

2006 ◽  
Vol 118 ◽  
pp. 53-58
Author(s):  
Elisabeth Meijer ◽  
Nicholas Armstrong ◽  
Wing Yiu Yeung
Keyword(s):  
Crystallite Size ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Equal Channel Angular Extrusion ◽  
Line Broadening ◽  
X Ray Diffraction ◽  
Integral Breadth ◽  
X Ray ◽  
Heat Treated ◽  
Diffraction Peaks

This study is to investigate the crystallite development in nanostructured aluminium using x-ray line broadening analysis. Nanostructured aluminium was produced by equal channel angular extrusion at room temperature to a total deformation strain of ~17. Samples of the extruded metal were then heat treated at temperatures up to 300oC. High order diffraction peaks were obtained using Mo radiation and the integral breadth was determined. It was found that as the annealing temperature increased, the integral breadth of the peak reflections decreased. By establishing the modified Williamson-Hall plots (integral breadth vs contract factor) after instrumental correction, it was determined that the crystallite size of the metal was maintained ~80 nm at 100oC. As the annealing temperature increased to 200oC, the crystallite size increased to ~118 nm. With increasing annealing temperature, the hardness of the metal decreased from ~60 HV to ~45 HV.

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