Experimental design for the determination of the injection barrier height at metal/organic interfaces using temperature dependent current-voltage measurements

2009 ◽  
Vol 80 (3) ◽  
pp. 033901 ◽  
Author(s):  
M. G. Helander ◽  
Z. B. Wang ◽  
M. T. Greiner ◽  
J. Qiu ◽  
Z. H. Lu
Keyword(s):  
Experimental Design ◽  
Barrier Height ◽  
Temperature Dependent ◽  
Organic Interfaces ◽  
Current Voltage ◽  
Metal Organic ◽  
Injection Barrier

Temperature-dependent current–voltage characteristics of the Au/n-InP diodes with inhomogeneous Schottky barrier height

2009 ◽  
Vol 404 (8-11) ◽  
pp. 1558-1562 ◽  
Author(s):  
F.E. Cimilli ◽  
M. Sağlam ◽  
H. Efeoğlu ◽  
A. Türüt
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Current Voltage Characteristics

High Barrier Height n-GaN Schottky diodes with a barrier height of 1.3 eV by using sputtered copper metal

1999 ◽  
Vol 572 ◽  
Author(s):  
W. C. Lai ◽  
M. Yokoyama ◽  
C. Y. Chang ◽  
J. D. Guo ◽  
J. S. Tsang ◽  
...  
Keyword(s):  
Barrier Height ◽  
Vapor Deposition ◽  
Schottky Diodes ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Copper Metal ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTCopper Schottky diodes on n-type GaN grown by metal-organic chemical vapor deposition were achieved and investigated. Ti/Al was used as the ohmic contact. The copper metal is deposited by the Sputter system. The barrier height was determined to be as high as (ΦB =1.13eV by current-voltage (I-V) method and corrected to be ΦB =1.35eV as considered the ideality factor, n, with the value of 1.2. By the capacitance-voltage (C-V) method, the barrier height is determined to be ΦB =1.41eV. Both results indicate that the sputtered copper metal is a high barrier height Schottky metal for n-type GaN.

Temperature-dependent current–voltage measurements of Au/C9H7N/p-Si: Characterization of a metal–organic-semiconductor device

2015 ◽  
Vol 34 ◽  
pp. 58-64 ◽  
Author(s):  
Z. Çaldıran ◽  
Ş. Aydoğan ◽  
A. Yesildag ◽  
D. Ekinci ◽  
S.V. Kurudirek ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Semiconductor Device ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Metal Organic

scholarly journals Temperature-dependent current–voltage characteristics of Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant

2015 ◽  
Vol 34 ◽  
pp. 359-364 ◽  
Author(s):  
Meehleketo A. Mayimele ◽  
Mmantsae Diale ◽  
Wilbert Mtangi ◽  
Francois D. Auret
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Current Voltage Characteristics

Evolution of Ti Schottky Barrier Heights on n-Type GaN with Annealing

1996 ◽  
Vol 449 ◽  
Author(s):  
Michèle T. Hirsch ◽  
Kristin J. Duxstad ◽  
E. E. Haller
Keyword(s):  
Barrier Height ◽  
Schottky Diodes ◽  
Electron Beam Evaporation ◽  
Organic Vapor ◽  
Barrier Heights ◽  
Effective Barrier ◽  
Mott Model ◽  
Current Voltage ◽  
Metal Organic ◽  
Ti Films

ABSTRACTWe report the effect of mild annealing on Ti Schottky diodes on n-type GaN. The Ti films were deposited by electron beam evaporation on n-type GaN grown by metal organic vapor deposition. We determine the effective barrier height Ф60 by current-voltage measurements as a function of temperature. The as-deposited Ti contacts show rectifying behavior with low barrier heights Ф60 ≤ 200meV. At annealing temperatures as low as 60°C we observe an increase of the barrier height to values of 250meV. After annealing at 230°C and above a stable barrier height of 450meV is measured. The increase in barrier height is not due to any macroscopic interfacial reaction. The origin of the observed changes are discussed in terms of the Schottky-Mott model and possible microscopic interfacial reactions.

Determination of valence band offsets from Si/Si1−xGex/Si using temperature‐dependent current–voltage characteristics

1996 ◽  
Vol 79 (5) ◽  
pp. 2463-2466 ◽  
Author(s):  
O. Chretien ◽  
A. Souifi ◽  
R. Apetz ◽  
L. Vescan ◽  
H. Lüth ◽  
...  
Keyword(s):  
Valence Band ◽  
Temperature Dependent ◽  
Band Offsets ◽  
Current Voltage ◽  
Current Voltage Characteristics

17.1: Invited Paper: Carrier Injection Barrier Formation at Metal/Organic Interfaces

2006 ◽  
Vol 37 (1) ◽  
pp. 1095
Author(s):  
J. X. Tang ◽  
M. K. Fung ◽  
C. S. Lee ◽  
S. T. Lee
Keyword(s):  
Carrier Injection ◽  
Barrier Formation ◽  
Organic Interfaces ◽  
Metal Organic ◽  
Injection Barrier
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