Temperature-dependent current–voltage measurements of Au/C9H7N/p-Si: Characterization of a metal–organic-semiconductor device

2015 ◽  
Vol 34 ◽  
pp. 58-64 ◽  
Author(s):  
Z. Çaldıran ◽  
Ş. Aydoğan ◽  
A. Yesildag ◽  
D. Ekinci ◽  
S.V. Kurudirek ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Semiconductor Device ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Metal Organic

scholarly journals Current-Voltage Characteristics of the Metal / Organic Semiconductor / Metal Structures: Top and Bottom Contact Configuration Case

2013 ◽  
Vol 19 (1) ◽  
Author(s):  
Šarūnas MEŠKINIS ◽  
Mindaugas PUCĖTA ◽  
Kęstutis ŠLAPIKAS ◽  
Sigitas TAMULEVIČIUS ◽  
Angelė GUDONYTĖ ◽  
...  
Keyword(s):  
Organic Semiconductor ◽  
Metal Structures ◽  
Bottom Contact ◽  
Contact Configuration ◽  
Current Voltage ◽  
Metal Organic ◽  
Current Voltage Characteristics

scholarly journals Charge transport in nanoparticular thin films of zinc oxide and aluminum-doped zinc oxide

2015 ◽  
Vol 3 (7) ◽  
pp. 1468-1472 ◽  
Author(s):  
Thomas Lenz ◽  
Moses Richter ◽  
Gebhard J. Matt ◽  
Norman A. Luechinger ◽  
Samuel C. Halim ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Charge Transport ◽  
Electrical Characterization ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Aluminum Doped Zinc Oxide ◽  
Doped Zno

In this work, we report on the electrical characterization of nanoparticular thin films of zinc oxide and aluminum-doped ZnO. Temperature-dependent current–voltage measurements revealed that charge transport is well described by the Poole–Frenkel model.

Growth, processing and characterization of GaN/AlGaN/SiC vertical n-p diodes

2005 ◽  
Vol 892 ◽  
Author(s):  
Steven Boeykens ◽  
Maarten Leys ◽  
Marianne Germain ◽  
Jef Poortmans ◽  
Benny Van Daele ◽  
...  
Keyword(s):  
Bipolar Transistors ◽  
Heteroepitaxial Growth ◽  
Temperature Dependent ◽  
Lattice Matching ◽  
Transmission Electron ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Si Doped ◽  
P Type

AbstractApplication of SiC substrates instead of the most commonly used sapphire for the heteroepitaxial growth of III-Nitrides offers advantages as better lattice matching, higher thermal conductivity, and electrical conductivity. This namely offers interesting perspectives for the development of vertical III-Nitride devices for switching purposes. For example, an AlGaN/SiC heterojunction could improve the performance of SiC bipolar transistors. In this work, n-type GaN layers have been grown by MOVPE on p-type 4H-SiC substrates using Si doped Al0.08Ga0.92N or Al0.3Ga0.7N nucleation layers. They have been characterized with temperature dependent current-voltage (I-V-T), capacitance-voltage (C-V) techniques and transmission electron microscopy (TEM).

Magnetic Field Sensors based on Magnetoresistance Effect in Organic Semiconductor Sandwich Devices

2005 ◽  
Vol 906 ◽  
Author(s):  
Govindarajan Veeraraghavan ◽  
Ömer Mermer ◽  
Yugang Sheng ◽  
Tho Duc Nguyen ◽  
Thomas Lee Francis ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Organic Semiconductor ◽  
Room Temperature ◽  
Experimental Characterization ◽  
Magnetoresistance Effect ◽  
Temperature Dependent ◽  
Magnetic Field Sensors ◽  
Mr Effect ◽  
Alternating Magnetic Fields

AbstractWe describe magnetic field sensors based on a recently discovered magnetoresistance (MR) effect in nonmagnetic organic semiconductor sandwich devices. The MR effect reaches up to 10% in a magnetic field of 10 mT at room temperature. We perform an extensive experimental characterization of this effect. We found that the MR effect is only weakly temperature dependent and does not depend on sign and direction of the applied magnetic field. We also measured the device response to alternating magnetic fields up to 100 kHz. To the best of our knowledge, the discovered MR effect is not adequately described by any of the MR mechanisms known to date.

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