Near-infrared photon upconversion devices based on GaNAsSb active layer lattice matched to GaAs
2011 ◽
Vol 415-417
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pp. 1403-1406
Keyword(s):
2014 ◽
Vol 12
(s2)
◽
pp. S21701-321704
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Keyword(s):
2012 ◽
Vol 41
(5)
◽
pp. 881-886
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Keyword(s):
2014 ◽
Vol 147
◽
pp. 209-215
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Keyword(s):
1998 ◽
Vol 16
(3)
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pp. 509-524
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