Resistivity reduction in heavily doped polycrystalline silicon using cw‐laser and pulsed‐laser annealing

1981 ◽  
Vol 52 (5) ◽  
pp. 3625-3632 ◽  
Author(s):  
T. Shibata ◽  
K. F. Lee ◽  
J. F. Gibbons ◽  
T. J. Magee ◽  
J. Peng ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Cw Laser ◽  
Heavily Doped

Formation of Sic, Si3N4 and SiO2 by High-Dose Ion Implantation and Laser Annealing

1980 ◽  
Vol 1 ◽  
Author(s):  
S.W. Chiang ◽  
Y.S. Liu ◽  
R.F. Reihl
Keyword(s):  
Ion Implantation ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
High Dose ◽  
Pulsed Laser Annealing ◽  
Transmission Electron ◽  
A Cell ◽  
Ft Ir ◽  
Ft Ir Spectroscopy

ABSTRACTHigh-dose ion implantation (1017 ions-cm−2) of C+, N+, and O+ at 50 KeV into silicon followed by pulsed laser annealing at 1.06 μm was studied. Formation of SiC, Si3N4, and SiO2 has been observed and investigated using Transmission Electron Microscopy (TEM) and Differential Fourier-Transform Infrared (FT-IR) Spectroscopy. Furthermore, in N+-implanted and laser-annealed silicon samples, we have observed a cell-like structure which has been identified to be spheroidal polycrystalline silicon formed by the rapid laser irradiation.

Very Heavily Doped N-Type GaAs Obtained With Pulsed Laser Annealing

1988 ◽  
Author(s):  
Andrzej Rys ◽  
Tim Chin ◽  
Alvin Compaan ◽  
Ajit Bhat
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Heavily Doped

Germanium Extremely Heavily Doped by Ion-Implantation and Laser Annealing: A Photoluminescence Study

1983 ◽  
Vol 23 ◽  
Author(s):  
J. Wagner ◽  
G. Contreras ◽  
A. Compaan ◽  
M. Cardona ◽  
A. Axmann
Keyword(s):  
Ion Implantation ◽  
Diagnostic Tool ◽  
Laser Annealing ◽  
Optical Band Gap ◽  
Pulsed Laser ◽  
Solubility Limit ◽  
Equilibrium Solubility ◽  
Photoluminescence Study ◽  
Pulsed Laser Annealing ◽  
Heavily Doped

ABSTRACTIt has been shown previously that dopant concentrations far above the equilibrium solubility limit can be obtained in semiconductors by pulsed laser annealing of heavily ion implanted material. We exploit this fact to study the photoluminescence of germanium with dopant concentrations up to 1021 cm−3. From this study we obtain information on the filling of higher lying band minima and the shift of the optical band gap as a function of carrier concentration over a much wider range than accessible with bulk doped material. In addition it is shown that photoluminescence provides a diagnostic tool to characterize implanted layers.

Photoluminescence and Bandgap Narrowing in Heavily Doped n-GaAs

1989 ◽  
Vol 163 ◽  
Author(s):  
H.D. Yao ◽  
A. Compaan
Keyword(s):  
Carrier Concentration ◽  
Conduction Band ◽  
Fermi Energy ◽  
Laser Annealing ◽  
Functional Form ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Bandgap Narrowing ◽  
Heavily Doped ◽  
Very High

AbstractExtremely heavily doped n-GaAs was produced by pulsed-laser annealing of Si implanted GaAs, achieving carrier concentrations exceeding 3.2×1019/cm3. Our photoluminescence (PL) spectra indicate a bandgap narrowing due to heavy n-type doping with a functional form of Δεg(eV) = - 6.3 × 10cm-8[(cm-2)]1/3 . At the highest carrier concentration, the bandgap shrinkage reaches -200 meV and the electron Fermi energy is -410 meV. These large values indicate that there exists a considerable conduction band “stretch” between the Γ and L-valley of GaAs for very high n-type concentrations.

Time-Resolved Si Lattic-Temperature Measurement on Wide Time Scale (10−9–100 sec.) During Laser Annealing

1983 ◽  
Vol 23 ◽  
Author(s):  
Kouichi Murakami ◽  
Hisayoshi Itoh ◽  
Yoshinori Tohmiya ◽  
Kōoki Takita ◽  
Kohzoh Masuda
Keyword(s):  
Refractive Index ◽  
Temperature Measurement ◽  
Time Scale ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Time Dependent ◽  
Lattice Temperature ◽  
Time Resolved ◽  
Pulsed Laser Annealing ◽  
Cw Laser

ABSTRACTTime-resolved Si lattice-temperature measurement has been developed on wide time scale from 10−9 to 100 sec during laser annealing, by utilizing the time-dependent optical interference in Si on sappire. This interference is due to small changes in Si refractive index induced by temporal changes in Si lattice-temperature. For ns–pulsed laser annealing, part of the absorbed photon energy is found to be transferred into lattice (phonons) in a time much shorter than 40-ns pulse duration. A new method using a microscope is demonstrated for time- and space-resolved Si latticetemperature measurements during cw laser annealing.

Dopants behavior in polycrystallization of heavily doped Ge1-xSnx layer using pulsed laser annealing in water

2017 ◽  
Author(s):  
K. Takahashi ◽  
M. Kurosawa ◽  
H. Ikenoue ◽  
M. Sakashita ◽  
O. Nakatsuka ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Heavily Doped
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