Time-Resolved Si Lattic-Temperature Measurement on Wide Time Scale (10−9–100 sec.) During Laser Annealing
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ABSTRACTTime-resolved Si lattice-temperature measurement has been developed on wide time scale from 10−9 to 100 sec during laser annealing, by utilizing the time-dependent optical interference in Si on sappire. This interference is due to small changes in Si refractive index induced by temporal changes in Si lattice-temperature. For ns–pulsed laser annealing, part of the absorbed photon energy is found to be transferred into lattice (phonons) in a time much shorter than 40-ns pulse duration. A new method using a microscope is demonstrated for time- and space-resolved Si latticetemperature measurements during cw laser annealing.
1981 ◽
Vol 20
(12)
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pp. L867-L870
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2000 ◽
Vol 174
(1-4)
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pp. 145-149
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1987 ◽
Vol 44
(2)
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pp. 141-146
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