AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

Journal of Applied Physics ◽

10.1063/1.3291101 ◽

2010 ◽

Vol 107 (2) ◽

pp. 024504 ◽

Author(s):

A. El Fatimy ◽

N. Dyakonova ◽

Y. Meziani ◽

T. Otsuji ◽

W. Knap ◽

...

Keyword(s):

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Terahertz Sources ◽

Electron Mobility Transistors

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High sensitivity carbon monoxide sensors made by zinc oxide modified gated GaN/AlGaN high electron mobility transistors under room temperature

Applied Physics Letters ◽

10.1063/1.3596440 ◽

2011 ◽

Vol 98 (22) ◽

pp. 223504 ◽

Author(s):

S. C. Hung ◽

C. W. Chen ◽

C. Y. Shieh ◽

G. C. Chi ◽

R. Fan ◽

...

Keyword(s):

Carbon Monoxide ◽

Electron Mobility ◽

Room Temperature ◽

High Sensitivity ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement

AIP Advances ◽

10.1063/1.4963740 ◽

2016 ◽

Vol 6 (9) ◽

pp. 095021 ◽

Author(s):

Bin Dong ◽

Jie Lin ◽

Ning Wang ◽

Ling-li Jiang ◽

Zong-dai Liu ◽

...

Keyword(s):

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistors ◽

Capacitance Measurement ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Temperature Transient ◽

Transient Capacitance

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Plasma wave electronics: terahertz sources and detectors using two dimensional electronic fluid in high electron mobility transistors

1998 IEEE Sixth International Conference on Terahertz Electronics Proceedings. THZ 98. (Cat. No.98EX171) ◽

10.1109/thz.1998.731682 ◽

2002 ◽

Author(s):

M.S. Shur ◽

J.-Q. Lu ◽

M.I. Dyakonov

Keyword(s):

Plasma Wave ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Two Dimensional ◽

High Electron Mobility ◽

Terahertz Sources ◽

Electron Mobility Transistors

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Publisher’s Note: “Trap behaviours characterization of AlGaN/GaN high electron mobility transistors by room-temperature transient capacitance measurement” [AIP Advances 6, 095021 (2016)]

AIP Advances ◽

10.1063/1.4966916 ◽

2016 ◽

Vol 6 (10) ◽

pp. 109903 ◽

Author(s):

Bin Dong ◽

Jie Lin ◽

Ning Wang ◽

Ling-li Jiang ◽

Zong-dai Liu ◽

...

Keyword(s):

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistors ◽

Capacitance Measurement ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Temperature Transient ◽

Transient Capacitance

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Room-temperature memory operation of AlGaAs/GaAs high electron mobility transistors with InAs quantum dots embedded in the channel

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138) ◽

10.1109/iedm.2000.904392 ◽

2002 ◽

Author(s):

Jae-Eung Oh ◽

Jong-Wook Kim

Keyword(s):

Quantum Dots ◽

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistors ◽

High Electron ◽

Inas Quantum Dots ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Precise determination of indium composition and channel thickness in pseudomorphic high electron mobility transistors using room temperature photoluminescence

Journal of Applied Physics ◽

10.1063/1.370823 ◽

1999 ◽

Vol 86 (2) ◽

pp. 914-917 ◽

Author(s):

Steven K. Brierley ◽

Abbas Torabi ◽

Peter S. Lyman

Keyword(s):

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistors ◽

Precise Determination ◽

High Electron ◽

High Electron Mobility ◽

Room Temperature Photoluminescence ◽

Electron Mobility Transistors ◽

Channel Thickness

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Tunable room temperature THz emission from AlGaN/GaN high electron mobility transistors

35th International Conference on Infrared, Millimeter, and Terahertz Waves ◽

10.1109/icimw.2010.5612620 ◽

2010 ◽

Author(s):

N. Dyakonova ◽

A. El Fatimy ◽

Y. Meziani ◽

T. Otsuji ◽

D. Coquillat ◽

...

Keyword(s):

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Determination of carbon-related trap energy level in (Al)GaN buffers for high electron mobility transistors through a room-temperature approach

Applied Physics Letters ◽

10.1063/5.0031029 ◽

2020 ◽

Vol 117 (26) ◽

pp. 263501

Author(s):

Xin Chen ◽

Yaozong Zhong ◽

Yu Zhou ◽

Hongwei Gao ◽

Xiaoning Zhan ◽

...

Keyword(s):

Energy Level ◽

Electron Mobility ◽

Room Temperature ◽

High Electron Mobility Transistors ◽

High Electron ◽

Trap Energy ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN∕GaN high electron mobility transistors

Applied Physics Letters ◽

10.1063/1.2117617 ◽

2005 ◽

Vol 87 (17) ◽

pp. 172105 ◽

Author(s):

Hung-Ta Wang ◽

B. S. Kang ◽

F. Ren ◽

R. C. Fitch ◽

J. K. Gillespie ◽

...

Keyword(s):

Electron Mobility ◽

Room Temperature ◽

Drain Current ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Detection

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Terahertz sources and detectors using two-dimensional electronic fluid in high electron-mobility transistors

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/22.841969 ◽

2000 ◽

Vol 48 (4) ◽

pp. 750-756 ◽

Author(s):

M.S. Shur ◽

Jian-Qiang Lu

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Two Dimensional ◽

High Electron Mobility ◽

Terahertz Sources ◽

Electron Mobility Transistors

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