Parasitic capacitance effect on programming performance of phase change random access memory devices

2010 ◽  
Vol 96 (4) ◽  
pp. 043506 ◽  
Author(s):  
E. G. Yeo ◽  
L. P. Shi ◽  
R. Zhao ◽  
K. G. Lim ◽  
T. C. Chong ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Parasitic Capacitance ◽  
Memory Devices ◽  
Access Memory ◽  
Capacitance Effect

SiO[sub 2] Incorporation Effects in Ge[sub 2]Sb[sub 2]Te[sub 5] Films Prepared by Magnetron Sputtering for Phase Change Random Access Memory Devices

2006 ◽  
Vol 9 (8) ◽  
pp. G259 ◽  
Author(s):  
Seung Wook Ryu ◽  
Jin Ho Oh ◽  
Byung Joon Choi ◽  
Sung-Yeon Hwang ◽  
Suk Kyoung Hong ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory

scholarly journals Microstructure-dependent DC set switching behaviors of Ge–Sb–Te-based phase-change random access memory devices accessed by in situ TEM

2015 ◽  
Vol 7 (6) ◽  
pp. e194-e194 ◽  
Author(s):  
Kyungjoon Baek ◽  
Kyung Song ◽  
Sung Kyu Son ◽  
Jang Won Oh ◽  
Seung-Joon Jeon ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
In Situ Tem ◽  
Memory Devices ◽  
Access Memory ◽  
Set Switching

Phase Change Random Access Memory Devices with Nickel Silicide and Platinum Silicide Electrode Contacts for Integration with CMOS Technology

2011 ◽  
Vol 158 (3) ◽  
pp. H232 ◽  
Author(s):  
Lina Wei-Wei Fang ◽  
Rong Zhao ◽  
Eng-Guan Yeo ◽  
Kian-Guan Lim ◽  
Hongxin Yang ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Cmos Technology ◽  
Nickel Silicide ◽  
Memory Devices ◽  
Access Memory ◽  
Platinum Silicide

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature

Reversible switching in bicontinuous structure for phase change random access memory application

Nanoscale ◽  
2021 ◽  
Vol 13 (8) ◽  
pp. 4678-4684
Author(s):  
Yan Cheng ◽  
Yonghui Zheng ◽  
Zhitang Song
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Bicontinuous Structure ◽  
Amorphous Si

A 3D nano-bicontinuous structure consisting of a reversible Sb2Te3 phase and amorphous Si phase is visualized. The amorphous Si frame is stable and the Sb2Te3 nano areas switch between the a- and f-structure.

Formation of Ge[sub 2]Sb[sub 2]Te[sub 5]–TiO[sub x] Nanostructures for Phase Change Random Access Memory Applications

2010 ◽  
Vol 13 (2) ◽  
pp. K8 ◽  
Author(s):  
Dongbok Lee ◽  
Sung-Soo Yim ◽  
Ho-Ki Lyeo ◽  
Min-Ho Kwon ◽  
Dongmin Kang ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Memory Applications

The effects of substrate temperature on ZnO-based resistive random access memory devices

2012 ◽  
Vol 21 (6) ◽  
pp. 065201 ◽  
Author(s):  
Jian-Wei Zhao ◽  
Feng-Juan Liu ◽  
Hai-Qin Huang ◽  
Zuo-Fu Hu ◽  
Xi-Qing Zhang
Keyword(s):  
Substrate Temperature ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory

Temperature Dependence of Phase-Change Random Access Memory Cell

2006 ◽  
Vol 45 (5A) ◽  
pp. 3955-3958 ◽  
Author(s):  
X. S. Miao ◽  
L. P. Shi ◽  
H. K. Lee ◽  
J. M. Li ◽  
R. Zhao ◽  
...  
Keyword(s):  
Phase Change ◽  
Temperature Dependence ◽  
Random Access ◽  
Memory Cell ◽  
Random Access Memory ◽  
Access Memory

scholarly journals Thermal characterization and analysis of phase change random access memory

2005 ◽  
Vol 98 (1) ◽  
pp. 013520 ◽  
Author(s):  
V. Giraud ◽  
J. Cluzel ◽  
V. Sousa ◽  
A. Jacquot ◽  
A. Dauscher ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Thermal Characterization ◽  
Access Memory
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