scholarly journals Microstructure-dependent DC set switching behaviors of Ge–Sb–Te-based phase-change random access memory devices accessed by in situ TEM

2015 ◽  
Vol 7 (6) ◽  
pp. e194-e194 ◽  
Author(s):  
Kyungjoon Baek ◽  
Kyung Song ◽  
Sung Kyu Son ◽  
Jang Won Oh ◽  
Seung-Joon Jeon ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
In Situ Tem ◽  
Memory Devices ◽  
Access Memory ◽  
Set Switching

scholarly journals Switching operation and degradation of resistive random access memory composed of tungsten oxide and copper investigated using in-situ TEM

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Masashi Arita ◽  
Akihito Takahashi ◽  
Yuuki Ohno ◽  
Akitoshi Nakane ◽  
Atsushi Tsurumaki-Fukuchi ◽  
...  
Keyword(s):  
Tungsten Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
In Situ Tem ◽  
Access Memory ◽  
Switching Operation

SiO[sub 2] Incorporation Effects in Ge[sub 2]Sb[sub 2]Te[sub 5] Films Prepared by Magnetron Sputtering for Phase Change Random Access Memory Devices

2006 ◽  
Vol 9 (8) ◽  
pp. G259 ◽  
Author(s):  
Seung Wook Ryu ◽  
Jin Ho Oh ◽  
Byung Joon Choi ◽  
Sung-Yeon Hwang ◽  
Suk Kyoung Hong ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory

scholarly journals Effect of Electrode Material on the Crystallization of GeTe Grown by Atomic Layer Deposition for Phase Change Random Access Memory

Micromachines ◽  
2019 ◽  
Vol 10 (5) ◽  
pp. 281 ◽  
Author(s):  
Seung Ik Oh ◽  
In Hyuk Im ◽  
Chanyoung Yoo ◽  
Sung Yeon Ryu ◽  
Yong Kim ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Atomic Layer ◽  
Switching Behavior ◽  
Access Memory ◽  
Set Switching ◽  
Layer Deposition ◽  
Avrami Kinetics

The electrical switching behavior of the GeTe phase-changing material grown by atomic layer deposition is characterized for the phase change random access memory (PCRAM) application. Planar-type PCRAM devices are fabricated with a TiN or W bottom electrode (BE). The crystallization behavior is characterized by applying an electrical pulse train and analyzed by applying the Johnson–Mehl–Avrami kinetics model. The device with TiN BE shows a high Avrami coefficient (>4), meaning that continuous and multiple nucleations occur during crystallization (set switching). Meanwhile, the device with W BE shows a smaller Avrami coefficient (~3), representing retarded nucleation during the crystallization. In addition, larger voltage and power are necessary for crystallization in case of the device with W BE. It is believed that the thermal conductivity of the BE material affects the temperature distribution in the device, resulting in different crystallization kinetics and set switching behavior.

Parasitic capacitance effect on programming performance of phase change random access memory devices

2010 ◽  
Vol 96 (4) ◽  
pp. 043506 ◽  
Author(s):  
E. G. Yeo ◽  
L. P. Shi ◽  
R. Zhao ◽  
K. G. Lim ◽  
T. C. Chong ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Parasitic Capacitance ◽  
Memory Devices ◽  
Access Memory ◽  
Capacitance Effect

Phase Change Random Access Memory Devices with Nickel Silicide and Platinum Silicide Electrode Contacts for Integration with CMOS Technology

2011 ◽  
Vol 158 (3) ◽  
pp. H232 ◽  
Author(s):  
Lina Wei-Wei Fang ◽  
Rong Zhao ◽  
Eng-Guan Yeo ◽  
Kian-Guan Lim ◽  
Hongxin Yang ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Cmos Technology ◽  
Nickel Silicide ◽  
Memory Devices ◽  
Access Memory ◽  
Platinum Silicide

Direct Observations of Nanofilament Evolution in Switching Processes in HfO2-Based Resistive Random Access Memory by In Situ TEM Studies

2017 ◽  
Vol 29 (10) ◽  
pp. 1602976 ◽  
Author(s):  
Chao Li ◽  
Bin Gao ◽  
Yuan Yao ◽  
Xiangxiang Guan ◽  
Xi Shen ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
In Situ Tem ◽  
Access Memory ◽  
Direct Observations

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature

Reversible switching in bicontinuous structure for phase change random access memory application

Nanoscale ◽  
2021 ◽  
Vol 13 (8) ◽  
pp. 4678-4684
Author(s):  
Yan Cheng ◽  
Yonghui Zheng ◽  
Zhitang Song
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Bicontinuous Structure ◽  
Amorphous Si

A 3D nano-bicontinuous structure consisting of a reversible Sb2Te3 phase and amorphous Si phase is visualized. The amorphous Si frame is stable and the Sb2Te3 nano areas switch between the a- and f-structure.

Formation of Ge[sub 2]Sb[sub 2]Te[sub 5]–TiO[sub x] Nanostructures for Phase Change Random Access Memory Applications

2010 ◽  
Vol 13 (2) ◽  
pp. K8 ◽  
Author(s):  
Dongbok Lee ◽  
Sung-Soo Yim ◽  
Ho-Ki Lyeo ◽  
Min-Ho Kwon ◽  
Dongmin Kang ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Memory Applications
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