Lateral GaAs growth over tungsten gratings on (001) GaAs substrates by metalorganic chemical vapor deposition and applications to vertical field‐effect transistors

Vapor Deposition ◽

Field Effect ◽

Chemical Vapor ◽

Gaas Substrates ◽

Vertical Field ◽

Vertical Field Effect ◽

Heterostructure Fe:InP/InGaAs Metal-Semiconductor Field-Effect Transistors Grown by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.1413 ◽

1995 ◽

Vol 34 (Part 1, No. 3) ◽

pp. 1413-1416

Author(s):

Shih-Chang Shei ◽

Yan-Kuin Su ◽

Meiso Yokoyama

Keyword(s):

Vapor Deposition ◽

Field Effect ◽

Chemical Vapor ◽

Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.2838214 ◽

2008 ◽

Vol 103 (3) ◽

pp. 033708 ◽

Cited By ~ 76

Author(s):

S. Keller ◽

C. S. Suh ◽

Z. Chen ◽

R. Chu ◽

S. Rajan ◽

...

Keyword(s):

Vapor Deposition ◽

Field Effect ◽

Chemical Vapor ◽

Improvement of GaAs Metal-Semiconductor Field-Effect Transistors Characteristics on SiO2Back-Coated Si Substrate by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.29.l2417 ◽

1990 ◽

Vol 29 (Part 2, No. 12) ◽

pp. L2417-L2419 ◽

Cited By ~ 3

Author(s):

Takashi Egawa ◽

Shinji Nozaki ◽

Tetsuo Soga ◽

Takashi Jimbo ◽

Masayoshi Umeno

Keyword(s):

Vapor Deposition ◽

Field Effect ◽

Chemical Vapor ◽

Si Substrate ◽

Excellent uniformity of threshold voltage of Si planar‐doped AlInAs/GaInAs heterointerface field‐effect transistors grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.103666 ◽

1990 ◽

Vol 57 (5) ◽

pp. 461-462 ◽

Cited By ~ 4

Author(s):

H. Ishikawa ◽

H. Shibata ◽

M. Kamada

Keyword(s):

Threshold Voltage ◽

Vapor Deposition ◽

Field Effect ◽

Chemical Vapor ◽

Improved characteristics of GaAs metal‐semiconductor field‐effect transistors on Si substrates back‐coated with SiO2by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.104331 ◽

1991 ◽

Vol 58 (12) ◽

pp. 1265-1267 ◽

Cited By ~ 10

Author(s):

T. Egawa ◽

S. Nozaki ◽

T. Soga ◽

T. Jimbo ◽

M. Umeno

Keyword(s):

Vapor Deposition ◽

Field Effect ◽

Chemical Vapor ◽

Si Substrates ◽

Metalorganic Chemical ◽

Improved Characteristics

Si delta‐doped field‐effect transistors by atmospheric pressure metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.105435 ◽

1991 ◽

Vol 59 (4) ◽

pp. 458-460 ◽

Cited By ~ 13

Author(s):

N. Pan ◽

J. Carter ◽

G. S. Jackson ◽

H. Hendriks ◽

X. L. Zheng ◽

...

Keyword(s):

Vapor Deposition ◽

Atmospheric Pressure ◽

Field Effect ◽

Chemical Vapor ◽

Enhancement of the Breakdown Voltage ofGaAs/AlxGa1-xAsHeterostructures for GaAs Metal-Semiconductor Field Effect Transistors Grown by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.2010 ◽

1997 ◽

Vol 36 (Part 1, No. 4A) ◽

pp. 2010-2017

Author(s):

Mikio Mohri ◽

Hiroaki Kakinuma ◽

Takashi Ueda ◽

Masahiro Akiyama

Keyword(s):

Breakdown Voltage ◽

Vapor Deposition ◽

Field Effect ◽

Chemical Vapor ◽

Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1372160 ◽

2001 ◽

Vol 89 (12) ◽

pp. 7846-7851 ◽

Cited By ~ 145

Author(s):

H. Marchand ◽

L. Zhao ◽

N. Zhang ◽

B. Moran ◽

R. Coffie ◽

...

Keyword(s):

Vapor Deposition ◽

Field Effect ◽

Chemical Vapor ◽

Stress Control ◽

Gan On Si ◽

Growth behavior on V-grooved high Miller index GaAs substrates by metalorganic chemical vapor deposition

Journal of Crystal Growth ◽

10.1016/0022-0248(94)00527-3 ◽

1995 ◽

Vol 146 (1-4) ◽

pp. 482-488 ◽

Cited By ~ 8

Author(s):

Moo-Sung Kim ◽

Yong Kim ◽

Min-Suk Lee ◽

Young Ju Park ◽

Seong-II Kim ◽

...

Keyword(s):

Vapor Deposition ◽

Chemical Vapor ◽

Growth Behavior ◽

Miller Index ◽

Gaas Substrates ◽

Material characteristics of metalorganic chemical vapor deposition of Bi2Te3 films on GaAs substrates

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2006.01.024 ◽

2006 ◽

Vol 290 (2) ◽

pp. 441-445 ◽

Cited By ~ 14

Author(s):

Yong-Chul Jung ◽

Jeong-Hun Kim ◽

Sang-Hee Suh ◽

Byeong-Kwon Ju ◽

Jin-Sang Kim

Keyword(s):

Vapor Deposition ◽

Chemical Vapor ◽

Gaas Substrates ◽

Material Characteristics ◽