Heterostructure Fe:InP/InGaAs Metal-Semiconductor Field-Effect Transistors Grown by Metalorganic Chemical Vapor Deposition

Shih-Chang Shei; Yan-Kuin Su; Meiso Yokoyama

doi:10.1143/jjap.34.1413

Heterostructure Fe:InP/InGaAs Metal-Semiconductor Field-Effect Transistors Grown by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.1413 ◽

1995 ◽

Vol 34 (Part 1, No. 3) ◽

pp. 1413-1416

Author(s):

Shih-Chang Shei ◽

Yan-Kuin Su ◽

Meiso Yokoyama

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Metalorganic Chemical Vapor Deposition ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Metalorganic Chemical

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Lateral GaAs growth over tungsten gratings on (001) GaAs substrates by metalorganic chemical vapor deposition and applications to vertical field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.332900 ◽

1984 ◽

Vol 55 (10) ◽

pp. 3868-3870 ◽

Cited By ~ 34

Author(s):

H. Asai ◽

S. Adachi ◽

S. Ando ◽

K. Oe

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Metalorganic Chemical Vapor Deposition ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Gaas Substrates ◽

Vertical Field ◽

Vertical Field Effect ◽

Metalorganic Chemical

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Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.2838214 ◽

2008 ◽

Vol 103 (3) ◽

pp. 033708 ◽

Cited By ~ 76

Author(s):

S. Keller ◽

C. S. Suh ◽

Z. Chen ◽

R. Chu ◽

S. Rajan ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Metalorganic Chemical Vapor Deposition ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Metalorganic Chemical

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Improvement of GaAs Metal-Semiconductor Field-Effect Transistors Characteristics on SiO2Back-Coated Si Substrate by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.29.l2417 ◽

1990 ◽

Vol 29 (Part 2, No. 12) ◽

pp. L2417-L2419 ◽

Cited By ~ 3

Author(s):

Takashi Egawa ◽

Shinji Nozaki ◽

Tetsuo Soga ◽

Takashi Jimbo ◽

Masayoshi Umeno

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Metalorganic Chemical Vapor Deposition ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Si Substrate ◽

Metalorganic Chemical

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Excellent uniformity of threshold voltage of Si planar‐doped AlInAs/GaInAs heterointerface field‐effect transistors grown by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.103666 ◽

1990 ◽

Vol 57 (5) ◽

pp. 461-462 ◽

Cited By ~ 4

Author(s):

H. Ishikawa ◽

H. Shibata ◽

M. Kamada

Keyword(s):

Chemical Vapor Deposition ◽

Threshold Voltage ◽

Vapor Deposition ◽

Field Effect ◽

Metalorganic Chemical Vapor Deposition ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Metalorganic Chemical

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Improved characteristics of GaAs metal‐semiconductor field‐effect transistors on Si substrates back‐coated with SiO2by metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.104331 ◽

1991 ◽

Vol 58 (12) ◽

pp. 1265-1267 ◽

Cited By ~ 10

Author(s):

T. Egawa ◽

S. Nozaki ◽

T. Soga ◽

T. Jimbo ◽

M. Umeno

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Metalorganic Chemical Vapor Deposition ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Si Substrates ◽

Metalorganic Chemical ◽

Improved Characteristics

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Si delta‐doped field‐effect transistors by atmospheric pressure metalorganic chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.105435 ◽

1991 ◽

Vol 59 (4) ◽

pp. 458-460 ◽

Cited By ~ 13

Author(s):

N. Pan ◽

J. Carter ◽

G. S. Jackson ◽

H. Hendriks ◽

X. L. Zheng ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Field Effect ◽

Metalorganic Chemical Vapor Deposition ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Metalorganic Chemical

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Enhancement of the Breakdown Voltage ofGaAs/AlxGa1-xAsHeterostructures for GaAs Metal-Semiconductor Field Effect Transistors Grown by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.2010 ◽

1997 ◽

Vol 36 (Part 1, No. 4A) ◽

pp. 2010-2017

Author(s):

Mikio Mohri ◽

Hiroaki Kakinuma ◽

Takashi Ueda ◽

Masahiro Akiyama

Keyword(s):

Chemical Vapor Deposition ◽

Breakdown Voltage ◽

Vapor Deposition ◽

Field Effect ◽

Metalorganic Chemical Vapor Deposition ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Metalorganic Chemical

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Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1372160 ◽

2001 ◽

Vol 89 (12) ◽

pp. 7846-7851 ◽

Cited By ~ 145

Author(s):

H. Marchand ◽

L. Zhao ◽

N. Zhang ◽

B. Moran ◽

R. Coffie ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Metalorganic Chemical Vapor Deposition ◽

Field Effect Transistors ◽

Chemical Vapor ◽

Stress Control ◽

Gan On Si ◽

Metalorganic Chemical

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AlGaAs/InGaAs Pseudomorphic Doped Channel Field Effect Transistor with A P-AlAs Buffer Layer Grown by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.2508 ◽

2000 ◽

Vol 39 (Part 1, No. 5A) ◽

pp. 2508-2511

Author(s):

Seung June Choi ◽

Youn Kyu Chung ◽

Dae Hyun Kim ◽

Hyung Joon Chu ◽

Kwang Seok Seo

Keyword(s):

Chemical Vapor Deposition ◽

Buffer Layer ◽

Vapor Deposition ◽

Field Effect ◽

Metalorganic Chemical Vapor Deposition ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Effect Transistor ◽

Metalorganic Chemical

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Heterojunction field-effect transistor by metalorganic chemical vapor deposition

Materials Chemistry and Physics ◽

10.1016/0254-0584(94)90220-8 ◽

1994 ◽

Vol 38 (4) ◽

pp. 398-401

Author(s):

M.K. Lee ◽

H.C. Liao ◽

C.C. Hu ◽

M.Y. Yeh

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Field Effect ◽

Metalorganic Chemical Vapor Deposition ◽

Field Effect Transistor ◽

Chemical Vapor ◽

Effect Transistor ◽

Metalorganic Chemical

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