Analysis of conduction band structure of gallium arsenide in the vicinity of two valley and three valley band models using a physical magnetoresistance effect in the temperature range 300–650 K

1984 ◽  
Vol 55 (8) ◽  
pp. 2940-2944
Author(s):  
T. K. Saxena ◽  
Shashi Bala ◽  
P. C. Mathur ◽  
H. L. Hartnagel
Keyword(s):  
Gallium Arsenide ◽  
Band Structure ◽  
Conduction Band ◽  
Magnetoresistance Effect ◽  
Temperature Range

Conduction Band Structure of Tellurium

1973 ◽  
Vol 35 (2) ◽  
pp. 525-533 ◽  
Author(s):  
Hitoshi Shinno ◽  
Ryozo Yoshizaki ◽  
Shoji Tanaka ◽  
Takao Doi ◽  
Hiroshi Kamimura
Keyword(s):  
Band Structure ◽  
Conduction Band

The gunn effect and conduction band structure in GaxIn1−xSb alloys

1969 ◽  
Vol 7 (13) ◽  
pp. 901-903 ◽  
Author(s):  
J.C. McGroddy ◽  
M.R. Lorenz ◽  
T.S. Plaskett
Keyword(s):  
Band Structure ◽  
Conduction Band ◽  
Gunn Effect

Effect of hydrostatic pressure on the fragmented conduction band structure of dilute Ga(AsN) alloys

2005 ◽  
Vol 72 (4) ◽  
Author(s):  
J. Endicott ◽  
A. Patanè ◽  
D. Maude ◽  
L. Eaves ◽  
M. Hopkinson ◽  
...  
Keyword(s):  
Hydrostatic Pressure ◽  
Band Structure ◽  
Conduction Band ◽  
Effect Of Hydrostatic Pressure

Applications of an In0.53Ga0.25Al0.22As/InP continuous-conduction-band structure for ultralow current operation transistors

1999 ◽  
Vol 75 (4) ◽  
pp. 572-574 ◽  
Author(s):  
Wen-Chau Liu ◽  
Hsi-Jen Pan ◽  
Shiou-Ying Cheng ◽  
Wei-Chou Wang ◽  
Jing-Yuh Chen ◽  
...  
Keyword(s):  
Band Structure ◽  
Conduction Band ◽  
Current Operation

Relative Analysis of GaAs, InSb, InP Using QWFET

2014 ◽  
Vol 984-985 ◽  
pp. 1080-1084 ◽  
Author(s):  
T.D. Subash ◽  
T. Gnanasekaran ◽  
J. Jagannathan ◽  
C. Divya
Keyword(s):  
Gallium Arsenide ◽  
Band Structure ◽  
Indium Phosphide ◽  
Low Power ◽  
Indium Antimonide ◽  
Electron Mobility ◽  
High Speed ◽  
Simulation Tool ◽  
Saturation Velocity ◽  
Relative Analysis

Indium Antimonide (InSb) has the greater electron mobility and saturation velocity of any semiconductor. Also InSb detectors are sensitive between 1–5 μm wavelengths and it belongs to III-V [13] component. In this paper we compare the InSb with some other major components like Indium Phosphide (InP) and Gallium Arsenide (GaAs) which are also from same III-V group. The analysis was made using the simulation tool TCAD and using the properties and band structure of those materials we compare InSb with InP and GaAs. The results we proposed shows that InSb is best for ultra high speed and very low power applications.

scholarly journals Theory of conduction band structure ofInNxSb1−xandGaNxSb1−xdilute nitride alloys

2008 ◽  
Vol 77 (16) ◽  
Author(s):  
A. Lindsay ◽  
E. P. O’Reilly ◽  
A. D. Andreev ◽  
T. Ashley
Keyword(s):  
Band Structure ◽  
Conduction Band ◽  
Nitride Alloys
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