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Spectroscopic charge pumping in Si nanowire transistors with a high-κ/metal gate
Applied Physics Letters
◽
10.1063/1.3368122
◽
2010
◽
Vol 96
(12)
◽
pp. 123506
◽
Cited By ~ 38
Author(s):
M. Cassé
◽
K. Tachi
◽
S. Thiele
◽
T. Ernst
Keyword(s):
Metal Gate
◽
Charge Pumping
◽
Si Nanowire
◽
Nanowire Transistors
Download Full-text
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Study on Random Telegraph Noise of High-κ/Metal-Gate Gate-All-Around Poly-Si Nanowire Transistors
10.7567/ssdm.2019.ps-1-03
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Author(s):
Y.-T. Chang
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Y.-L. Tsai
◽
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P.-W. Li
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Metal Gate
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Random Telegraph Noise
◽
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Nanowire Transistors
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Study on random telegraph noise of high-κ/metal-gate gate-all-around poly-Si nanowire transistors
Japanese Journal of Applied Physics
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10.7567/1347-4065/ab5b67
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2020
◽
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◽
pp. SGGA04
Author(s):
You-Tai Chang
◽
Yueh-Lin Tsai
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Kang-Ping Peng
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Pei-Wen Li
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...
Keyword(s):
Metal Gate
◽
Random Telegraph Noise
◽
Si Nanowire
◽
Nanowire Transistors
◽
Telegraph Noise
Download Full-text
Quantum Confinement Induced Performance Enhancement in Sub-5-nm Lithographic Si Nanowire Transistors
Nano Letters
◽
10.1021/nl103278a
◽
2011
◽
Vol 11
(4)
◽
pp. 1412-1417
◽
Cited By ~ 74
Author(s):
Krutarth Trivedi
◽
Hyungsang Yuk
◽
Herman Carlo Floresca
◽
Moon J. Kim
◽
Walter Hu
Keyword(s):
Quantum Confinement
◽
Performance Enhancement
◽
Si Nanowire
◽
Nanowire Transistors
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Study of the 1D Scattering Mechanisms' Impact on the Mobility in Si Nanowire Transistors
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
◽
10.1109/ulis.2018.8354723
◽
2018
◽
Cited By ~ 5
Author(s):
C. Medina-Bailon
◽
T. Sadi
◽
M. Nedjalkov
◽
J. Lee
◽
S. Berrada
◽
...
Keyword(s):
Si Nanowire
◽
Nanowire Transistors
◽
Scattering Mechanisms
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Channel length dependence of discrete dopant effects in narrow si nanowire transistors: A full 3D NEGF study
2010 14th International Workshop on Computational Electronics
◽
10.1109/iwce.2010.5677945
◽
2010
◽
Author(s):
A. Martinez
◽
A. Asenov
◽
M. Aldegunde
Keyword(s):
Channel Length
◽
Si Nanowire
◽
Nanowire Transistors
◽
Length Dependence
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Performance Prediction of Stacked Nanowire Transistors in the Presence of Random Discrete Dopants and Metal Gate Granularity
2019 Devices for Integrated Circuit (DevIC)
◽
10.1109/devic.2019.8783687
◽
2019
◽
Author(s):
S. Dey
◽
E. Mohapatra
◽
J. Jena
◽
S. Das
◽
T. P. Dash
◽
...
Keyword(s):
Performance Prediction
◽
Metal Gate
◽
Nanowire Transistors
◽
Random Discrete Dopants
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Vertically Stacked Gate-All-Around Si Nanowire CMOS Transistors with Reduced Vertical Nanowires Separation, New Work Function Metal Gate Solutions, and DC/AC Performance Optimization
2018 IEEE International Electron Devices Meeting (IEDM)
◽
10.1109/iedm.2018.8614528
◽
2018
◽
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R. Ritzenthaler
◽
H. Mertens
◽
V. Pena
◽
G. Santoro
◽
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◽
...
Keyword(s):
Work Function
◽
Performance Optimization
◽
New Work
◽
Metal Gate
◽
Si Nanowire
◽
Cmos Transistors
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Gate-All-Around Si-Nanowire Transistors: Simulation at Nanoscale
2018 IEEE Electron Devices Kolkata Conference (EDKCON)
◽
10.1109/edkcon.2018.8770471
◽
2018
◽
Author(s):
S. Dey
◽
T. P. Dash
◽
S. Das
◽
E. Mohapatra
◽
J. Jena
◽
...
Keyword(s):
Si Nanowire
◽
Nanowire Transistors
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Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks
Applied Physics Letters
◽
10.1063/1.4773914
◽
2013
◽
Vol 102
(1)
◽
pp. 012106
◽
Cited By ~ 4
Author(s):
Szu-Han Ho
◽
Ting-Chang Chang
◽
Bin-Wei Wang
◽
Ying-Shin Lu
◽
Wen-Hung Lo
◽
...
Keyword(s):
Metal Oxide
◽
High Voltage
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Gate Stacks
◽
Metal Gate
◽
Charge Pumping
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CMOS without Doping on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications
ECS Journal of Solid State Science and Technology
◽
10.1149/2.002307jss
◽
2013
◽
Vol 2
(6)
◽
pp. Q88-Q93
◽
Cited By ~ 7
Author(s):
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T. Krauss
◽
F. Wessely
Keyword(s):
Si Nanowire
◽
Nanowire Transistors
◽
Memory Applications
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