Laser‐induced chemical vapor deposition of hydrogenated amorphous silicon. II. Film properties

1987 ◽  
Vol 62 (7) ◽  
pp. 2822-2829 ◽  
Author(s):  
M. Meunier ◽  
J. H. Flint ◽  
J. S. Haggerty ◽  
D. Adler
Keyword(s):  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Film Properties ◽  
Hydrogenated Amorphous

A Model for the Laser-Induced Chemical Vapor Deposition of Hydrogenated Amorphous Silicon

1983 ◽  
Vol 29 ◽  
Author(s):  
M. Meunier ◽  
J.H. Flint ◽  
D. Adler ◽  
J.S. Haggerty
Keyword(s):  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Thermal Dissociation ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Gas Temperature ◽  
Film Properties ◽  
Rate Controlled ◽  
Hydrogenated Amorphous

ABSTRACTWe propose a model for laser-induced chemical vapor deposition in which the growth of hydrogenated amorphous silicon (a-Si:H) thin films is rate-controlled by the gas phase homogeneous thermal dissociation of SiH4 The gas temperature is determined by a steady-state balance between energy absorbed from the laser and energy lost by thermal conduction.The film properties are primarily controlled by the substrate temperature.

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